Grid and Geometry Techniques for Multi-Layer Process Simulation

Sahul, Z.H.; Dutton, R.W.; Noell, M.

doi:10.1007/978-3-7091-6657-4_103

Cited by 13 publications

(3 citation statements)

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“…Solid modeling has been very useful in diagnosis of high density structure such as memory cell design and in the analysis of parasitic components that are frequently encountered in high speed microwave circuits. The most recent development is a program called FOREST [4], which is targeted at the auto-meshing of complex multi-layer device and process simulation. This figure clearly indicates the complexity of the structure that can easily be created and analyzed using the utilities and information models presented in Figure 3.…”

Section: Oeic Design Framework -3d Solid Modeling and Griddingmentioning

confidence: 99%

<title>Integrated TCAD for OEIC applications</title>

Dutton

Rotella

Sahul

et al. 1994

Physics and Simulation of Optoelectronic Devices II

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Progress in technology CAD (TCAD) tools that span the range of IC circuit design, semiconductor device modeling, and material processing simulation is discussed. Special emphasis is given to the application in the opto-electronic devices and systems. Promising techniques for the mixed device/circuit simulation are presented using UC Berkeley's SPICE and Stanford's PISCES programs. Results show the capability to optimize the circuit timing and impedances to match the internal physical effects and the resulting optical properties in AlGaAs based LEDs. 3D solid modeling, a new approach for interactive device design based on the mask layout information, is discussed. Automatic gridding to support a unified process/device modeling capability for GaAs structures using SUPREM-IV.GS is also introduced. Taken as a whole, the unification of these TCAD tools provides a powerful design approach for the world of the opto-electronic ICs (OEIC).

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Section: Oeic Design Framework -3d Solid Modeling and Griddingmentioning

confidence: 99%

<title>Integrated TCAD for OEIC applications</title>

Dutton

Rotella

Sahul

et al. 1994

Physics and Simulation of Optoelectronic Devices II

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“…1. In case of a 2D refined mesh using SUPREM-IV algorithms, a strange ripped nylon mesh is generated after etching as seen in " Fig The traditional geometrical etching algorithms [5], [7], [10] are based on geometrical Boolean operations as region subtractions, region intersections, and region unions. They also incorporate additional supporting algorithms as, geometry validation, mesh quality control after etching, delooping, removing holes, and making regions convex.…”

Section: Introductionmentioning

confidence: 99%

Advanced Algorithms for Etching Simulation of 3d Mems-Tunable Lasers

Boukili¹

2013

IJCTCM

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This The integrated circuits (ICs) industry uses a number of technology computer aided design (TCAD) software tools to simulate the manufacturing and the operation of many ICs at different levels. At very low level, the simulation tools are used to simulate the device fabrication and design. These simulation tools are based on solving mathematical equations that describe the physics of dopant diffusion, silicon oxidation, etching, deposition, lithography, implantation, and metallization. The simulation of physical etching solves etching equations to calculate the etching rate. And this rate is used to move the geometry of the device. The simulation of non-physical (geometrical) etching is based on geometrical Boolean operations. In this paper, we are proposing new and advanced geometrical etching algorithms for the process simulation of three dimensional (3D) micro electro mechanical systems (MEMS) and MEMStunable vertical cavity semiconductor optical amplifiers (VCSOAs). These algorithms are based on advanced domain decomposition methods, Delaunay meshing algorithms, and surface re-meshing and smoothing techniques. These algorithms are simple, robust, and significantly reduce the overall run time of the process simulation of 3D MEMS and MEMS-tunable laser devices. The description of the proposed etching algorithms will be presented. Numerical simulation results showing the performances of these algorithms will be given and analyzed for realistic 3D MEMS and MEMS-tunable laser devices.

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“…In addition to the chemical potential driving force in equation (3), we are able to consider diffusion due to electrical potential with this element. The mesh for the example was generated using the 2D geometry and grid program FOREST [7]. The mesh in the grain boundary region of influence is fine enough to ensure that the nodes.…”

Section: Reewltsmentioning

confidence: 99%

Mesoscale modeling of diffusion in polycrystalline structures

Bassman

Ibrahim²,

Pinsky³

et al.

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest

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We present a new diffusion simulation methodology which has been developed as part of our BackEnd Simulation Tool (BEST) effort. This approach uses the finite element method to address issues critical for modeling polycrystalline materials at the mesoscopic scale. We have included separate grain and grain boundary diffusion, spatially continuous material properties and the concept of equilibrium concentration.

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Grid and Geometry Techniques for Multi-Layer Process Simulation

Cited by 13 publications

References 1 publication

<title>Integrated TCAD for OEIC applications</title>

<title>Integrated TCAD for OEIC applications</title>

Advanced Algorithms for Etching Simulation of 3d Mems-Tunable Lasers

Mesoscale modeling of diffusion in polycrystalline structures

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