Grazing Incidence X-Ray Reflectivity and Scattering

Tanner, B. K.

doi:10.1007/978-3-319-26553-7_16

Cited by 7 publications

(6 citation statements)

References 70 publications

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“…where α c is the critical angle, r 0 is the classical electron radius, λ is the wavelength of CuKα1, N A is Avogadro's number, Z is the atomic number of Ti, f is the real part of the dispersion coefficient, A is the atomic weight of Ti and ρ is the density of the films [40]. Theoretically calculated densities of films deposited at −70 V, 0 V and +30 V were 4.974, 4.058 and 3.499 g/cm 3 , respectively.…”

Section: Ti Thin Film Depositionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

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Section: Ti Thin Film Depositionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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“…3b) at the sides of the second specular Kiessig fringe. 50 The Yoneda wings were modelled assuming a fractal interface. 51 In this way, we obtained the lateral correlation length of the α-MoO 3 layer to be 40 nm.…”

Section: Resultsmentioning

confidence: 99%

Molybdenum precursor delivery approaches in atomic layer deposition of α-MoO₃

et al. 2023

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“…Specular XRR is insensitive to the deformation in the unit cell parameters. Thus, Kiessig fringes are solely caused by the interference of the waves that are reflected at the surface of the layers . This implies that the period of the oscillation (i.e., the Kiessig fringes) is ruled by the thicknesses associated with the GaN QW and the AlGaN barrier.…”

Section: Resultsmentioning

confidence: 99%