Graphene transfer methods for the fabrication of membrane-based NEMS devices

Wagner, Stefan; Weisenstein, Christian; Smith, Anderson David; Östling, Mikael; Kataria, Satender

doi:10.1016/j.mee.2016.02.065

Cited by 42 publications

(50 citation statements)

References 27 publications

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“…Commercial (Graphenea) and in-house ( 45 ) CVD-grown single-layer graphene (Moorfield NanoCVD) was used in our experiments. An optimized wet transfer method was used to transfer single-layer CVD-grown graphene from the copper substrate to a SiO 2 layer on a Si substrate ( 46 ). The thickness of the SiO 2 layer was 125 nm.…”

Section: Methodsmentioning

confidence: 99%

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

et al. 2018

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Section: Methodsmentioning

confidence: 99%

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

et al. 2018

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“…After dicing the wafers into small chips (1.5 cm x 1.5 cm) and performing a standard cleaning procedure, photolithography was used to define larger windows covering the Si active areas. Then, native oxide was removed from the active areas using etching transfer technique 28,29 . Afterwards, the SLG was patterned using a step of photolithography followed by reactive ion etching (RIE) in oxygen plasma.…”

Section: A Device Fabricationmentioning

confidence: 99%

Electron Transport across Vertical Silicon/MoS₂/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Belete

Engström

Vaziri

et al. 2020

ACS Appl. Mater. Interfaces

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Heterostructures comprising of silicon, molybdenum disulfide (MoS2) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature dependent asymmetric current, indicating thermally activated charge carrier transport. The data is compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across the devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS2 is linearly temperature dependent for T = 200 to 300 K with a positive temperature coefficient. The temperature dependence may be attributed to a change in band gap difference between Si and MoS2, strain at the Si/MoS2 interface or different electron effective masses in Si and MoS2, leading to a possible entropy change stemming from variation in density of states as electrons move from Si to MoS2. The low barrier formed between Si and MoS2 and the resultant thermionic emission demonstrated here makes the present devices potential candidates as the emitter diode of graphene-base hot electron transistors for future high-speed electronics.

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“…The assembling technique of the two parts is one of the important procedures. [12][13][14] The lifetime is one of the important indicators for evaluating the performance of smart electronic devices. Although various electrodes have been successfully fabricated, unavoidable shortcomings still exist.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin PEDOT:PSS/rGO Aerogel Providing Tape‐Like Self‐Healable Electrode for Sensing Space Electric Field with Electrochemical Mechanism

Wei

Wang

et al. 2019

Adv Elect Materials

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A versatile composite aerogel is developed by introducing of PEDOT:PSS in reduced graphene oxide, resulting in an ultrathin aerogel film around 100 µm thick. Like a tape, the aerogel can tightly attach to smooth or rough substrate, and there forms a self‐healable and anti‐vibration energy storage electrode. With a Ti foil substrate, the electrode offers an electrochemical capacity of 190 mF cm−2 at 0.1 mA cm−2 working current density. It also exhibits 98.7% capacitance retention after 10 000 charge/discharge cycles, with almost negligible capacitance decline even after eight damaging/healing cycles or 4000 vibrating cycles. With symmetrical aerogel‐based electrodes, a smart electrochemical device is explored as a sensor for sensitively detecting space electric field strength, ranging from 1100 to 19 000 V m−1. Simulation results verify that the response current in the sensor comes from the internal recombination current in the electrochemical device, which originates from ion recombination near the electrode substrate in space electric field. Further, a validation sensor experiment is designed and realized with affiliated modules, successfully monitoring space electric field.

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Cited by 42 publications

References 27 publications

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

Electron Transport across Vertical Silicon/MoS₂/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Ultrathin PEDOT:PSS/rGO Aerogel Providing Tape‐Like Self‐Healable Electrode for Sensing Space Electric Field with Electrochemical Mechanism

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Cited by 42 publications

References 27 publications

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Ultrathin PEDOT:PSS/rGO Aerogel Providing Tape‐Like Self‐Healable Electrode for Sensing Space Electric Field with Electrochemical Mechanism

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Product

Resources

About

Electron Transport across Vertical Silicon/MoS₂/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors