Rapid, simple, and large-area imaging of grain boundaries in CVD graphene placed on a SiO2 surface by vapor HF exposure.

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively investigate the local transport properties of graphene prepared by polymer assisted sublimation growth (PASG) using scanning tunneling potentiometry. PASG graphene is characterized by a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H-SiC substrate as well as with the distance between the graphene

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We investigated the reversal characteristics of magnetic vortex cores in a two dimensional assembly of magnetic vortices. The vortex lattice was created by film deposition of 30-nm-thick permalloy onto large arrays of self-assembled spherical SiO2-particles with a diameter of 330 nm. The vortex core reversal was investigated by employing a write/read tester. This device uses a state-of-the-art magnetic recording head of a hard disc drive, which allows imaging as well as applying a local magnetic field pulse to individual vortices. The successful writing and reading of individual vortex cores is demonstrated, including a switching map, which indicates the switching behavior dependent on the relative position of the field pulse with respect to the vortex core.

Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal silicon carbide (SiC)(0001) substrate and overcompensation by donor-like states related to the buffer layer. The presented work is evidence that this effect is also related to the specific underlying SiC terrace. Here a periodic sequence of non-identical SiC terraces is fabricated, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surfacesensitive methods. This correlation is attributed to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. These findings open a new approach for a nano-scale doping-engineering by the self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

The crystallinity of graphene flakes and their orientation with respect to the Cu(111) substrate are investigated by means of low‐energy electron microscopy (LEEM). The interplay between graphene and the metal substrate during chemical vapor deposition (CVD) introduces a restructuring of the metal surface into surface facets, which undergo a step bunching process during the growth of additional layers. Moreover, the surface facets introduce strain between the successively nucleated layers that follow the topography in a carpet‐like fashion. The strain leads to dislocations in between domains of relaxed Bernal stacking. After the transfer onto an epitaxial buffer layer, the imprinted rippled structure of even monolayer graphene as well as the stacking dislocations are preserved. A similar behavior might also be expected for other CVD grown 2D materials such as hexagonal boron nitride or transition metal dichalcogenides, where stacking relations after transfer on a target substrate or heterostructure could become important in future experiments.

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Heterostructures of alloyed Bi x Sn 1-x Se layers, 0 ≤ x ≤ 1.0, interleaved with NbSe 2 monolayers, were prepared by using the modulated elemental reactants technique to investigate the occurrence of antiphase boundaries as a function of Bi concentration. A Rietveld refinement of the c-axis structure of the x = 0.50 compound revealed a reduced gap distance between the Bi plane in the Bi x Sn 1-x Se layers and the Se plane in the NbSe 2 layers and an increased internal Se-Se plane spacing within the Bi x Sn 1-x Se layers relative to the end member compounds, suggesting increased interaction between the layers at this [a]