Graphene synthesis and characterization on copper

Mohsin, Ali Kamel

doi:10.17077/etd.xkpszqo8

Cited by 5 publications

(2 citation statements)

References 73 publications

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“…It becomes broader when more graphene layers are present, mainly due to the change of the electronic structure of graphene [17]. The ratio of intensities of 2D and G bands calculated from the Raman spectrum (figure 1(a)) is found to be 0.72 depicting the presence of few layer graphene [18]. The number of graphene layers is estimated to be less than four, based on the ratio of intensities of the G peak and Si peak.…”

Section: Graphene Transfer and Characterizationmentioning

confidence: 99%

Graphene based multifunctional flame sensor

Ferry

Kumar²,

Reddy³

et al. 2015

Nanotechnology

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Recently, graphene has attracted much attention due to its unique electrical and thermal properties along with its high surface area, and hence presents an ideal sensing material. We report a novel configuration of a graphene based flame sensor by exploiting the response of few layer graphene to a flame along two different directions, where flame detection results from a difference in heat transfer mechanisms. A complete sensor module was developed with a signal conditioning circuit that compensates for any drift in the baseline of the sensor, along with a flame detection algorithm implemented in a microcontroller to detect the flame. A pre-defined threshold for either of the sensors is tunable, which can be varied based on the nature of the flame, hence presenting a system that can be used for detection of any kind of flame. This finding also presents a scalable method that opens avenues to modify complicated sensing schemes.

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Section: Graphene Transfer and Characterizationmentioning

confidence: 99%

Graphene based multifunctional flame sensor

Ferry

Kumar²,

Reddy³

et al. 2015

Nanotechnology

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show abstract

“…To characterize a larger volume of material than assessed with the TEM, the Cu-G was finally examined with an Olympus BX51 optical microscope and a Renishaw InVia Raman Spectrometer with a 532 nm laser. For pure graphene, the most prominent features of the Raman spectrum are the D-peak (1350 cm −1 ), G-peak (1580 cm −1 ) and 2D-peak (2675 cm −1 ) [43][44][45][46]. The locations and relative intensities of these peaks can be used to nondestructively reveal a variety of features, such as the number/orientation of layers, amount of strain, and types/abundances of defects.…”

Section: Optical Microscopy and Raman Spectroscopymentioning

confidence: 99%

Oxidation of the polycrystalline copper–graphene nanocomposite

et al. 2019

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Since the experimental discovery of graphene, research has progressed at an astonishing speed. This 2D honeycomb has already exhibited revolutionary electronic properties and claimed the record for strength. However, getting graphene out of the lab requires improved characterization, especially of imperfections. Hence, this paper explores one of the most important defects in a copper-graphene nanocomposite fabricated by chemical vapor deposition (CVD), which is the method most capable of producing large sheets of high-quality graphene. Through electron microscopies, optical microscopy, and Raman spectroscopy, this work details (1) the room-temperature oxidation of the copper substrate coated with graphene and (2) the heterogeneities of the graphene due to deposition and oxidation. The results indicate that this oxidation can be confined by grain boundaries, forms in the copper substrate as Cu 2 O, and minimally affects the graphene quality. This investigation also suggests that CVD can produce a variable number of high-quality, graphene layers.

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A variation-aware design for storage cells using Schottky-barrier-type GNRFETs

Abbasian

Gholipour

2020

J Comput Electron

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Graphene synthesis and characterization on copper

Cited by 5 publications

References 73 publications

Graphene based multifunctional flame sensor

Graphene based multifunctional flame sensor

Oxidation of the polycrystalline copper–graphene nanocomposite

A variation-aware design for storage cells using Schottky-barrier-type GNRFETs

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