Graphene-lead zirconate titanate optothermal field effect transistors

Hsieh, Chun-Yi; Chen, Yung-Ting; Tan, Wei-Jyun; Chen, Yang‐Fang; Shih, Wei‐Heng

doi:10.1063/1.3693607

Cited by 32 publications

(43 citation statements)

References 22 publications

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“…[ 21,22 ] During the past few years, we developed optothermal fi eld effect transistor by replacing the gate dielectric SiO 2 by lead zirconate titanate (PZT). [ 23 ] Chemical vapor deposition (CVD) grown graphene has been transferred to PZT substrate and covered by poly(3-hexylthiophene-2,5-diyl) (P3HT) to make hybrid graphene-organic photodetectors. [ 24 ] The intrinsic electric fi eld of PZT substrate can pass through SLG and is shown to help the transfer of photogenerated holes of P3HT to the graphene channel, enhancing the responsivity ten times that of SiO 2 substrate.…”

Section: Introductionmentioning

confidence: 99%

Electrical‐Polarization‐Induced Ultrahigh Responsivity Photodetectors Based on Graphene and Graphene Quantum Dots

Haider

Roy

Chiang

et al. 2015

Adv Funct Materials

Self Cite

102

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Hybrid quantum dot-graphene photodetectors have recently attracted substantial interest because of their remarkable performance and low power consumption. However, the performance of the device greatly depends on the interfacial states and photogenerated screening fi eld. As a consequence, the sensitivity is limited and the response time is relatively slow. In order to circumvent these challenges, herein, a composite graphene and graphene quantum dot (GQD) photodetector on lead zirconate titanate (Pb(Zr 0.2 Ti 0.8 )O 3 ) (PZT) substrates has been designed to form an ultrasensitive photodetector over a wide range of illumination power. Under 325 nm UV light illumination, the device shows sensitivity as high as 4.06 × 10 9 A W −1 , which is 120 times higher than reported sensitivity of the same class of devices. Plant derived GQD has a broad range of absorptivity and is an excellent candidate for harvesting photons generating electron-hole pairs. Intrinsic electric fi eld from PZT substrate separates photogenerated electron-hole pairs as well as provides the built-in electric fi eld that causes the holes to transfer to the underlying graphene channel. The composite structure of graphene and GQD on PZT substrate therefore produces a simple, stable, and highly sensitive photodetector over a wide range of power with short response time, which shows a way to obtain high-performance optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Electrical‐Polarization‐Induced Ultrahigh Responsivity Photodetectors Based on Graphene and Graphene Quantum Dots

Haider

Roy

Chiang

et al. 2015

Adv Funct Materials

Self Cite

102

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“…The doping behaviour in graphene can be understood in terms of electrostatic potential created by the dipoles in P(VDF-TrFE) fluoropolymer [14][15][16][17][18]. The two stable states of opposite polarity of ferroelectric polarization charge introduce either p type or n-type semiconducting behaviour depending on the polarity of the polarization charge [19,20]. Furthermore, the flexible nature of PVDF-TrFE provides an excellent mechanical support to the monolayer/multilayer graphene.…”

Section: Introductionmentioning

confidence: 99%

Self-powered graphene thermistor

et al. 2016

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“…The charge accumulates at the interface and the carrier concentration is therefore modulated. Under such circumstances, the IR works as a negative 'gate' in the FET devices [53,54].…”

Section: D Semiconductors/conventional Piezoelectric Oxide Heterostrmentioning

confidence: 99%

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

2017

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Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS 2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

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Graphene-lead zirconate titanate optothermal field effect transistors

Abstract: Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors Appl. Phys. Lett.

Cited by 32 publications

References 22 publications

Electrical‐Polarization‐Induced Ultrahigh Responsivity Photodetectors Based on Graphene and Graphene Quantum Dots

Electrical‐Polarization‐Induced Ultrahigh Responsivity Photodetectors Based on Graphene and Graphene Quantum Dots

Self-powered graphene thermistor

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

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