Graphene Field Effect Transistors: Diffusion-Drift Theory

Зебрев, Г. И.

doi:10.5772/14211

Cited by 23 publications

(37 citation statements)

References 19 publications

(19 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(a)) of the waveguide and extracted the optical absorption at 1.55µm ( Fig. 2(b)) as a function of the Fermi level and of the applied voltage calculated according to the following formula [25]:…”

Section: Simulationmentioning

confidence: 99%

High-speed double layer graphene electro-absorption modulator on SOI waveguide

Giambra¹,

Sorianello²,

Mišeikis³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.

show abstract

Section: Simulationmentioning

confidence: 99%

High-speed double layer graphene electro-absorption modulator on SOI waveguide

Giambra¹,

Sorianello²,

Mišeikis³

et al. 2019

Opt. Express

View full text Add to dashboard Cite

show abstract

“…The physical framework is a field-effect model and drift-diffusion carrier transport with saturation velocity effects, which is accurate in explaining the I-V behavior of graphene FETs [19]- [20].…”

Section: B Electrical Modelmentioning

confidence: 99%

Graphene resonant channel transistor

Xu¹,

Li²,

Xu³

2013

2013 IEEE International Wireless Symposium (IWS)

View full text Add to dashboard Cite

Two kinds of doubly clamped beam graphene resonant channel transistors (RCTs) with local gate configurations, fabricated by direct exfoliation and transfer are presented in this paper. The RCTs are actuated and detected directly by using a vector network analyzer. And the measurement results show that the exfoliation RCT and transfer RCT have resonant frequencies of ~34MHz at 77K and ~88MHz at 300K, respectively. The operation principle of radio frequency (RF) RCT is detailed in this paper. And a compact electrical equivalent circuit model has been given out based on the analysis of electromechanical model of doubly clamped beam and field effect transistor theory. The results show that excellent agreements have been achieved between the experimental results and the simulation results. With the proposed compact model, the RCTs can be useful for developing high sensitivity sensor, or in the perspective of high quality RF filters by using graphene nano-electromechanical systems(NEMS). IndexTerms-Graphene, nano-electromechanical systems(NEMS), radio frequency model, resonant channel transistor(RCT)

show abstract

“…A self-consistent calculation of chemical doping effects requires an exact quantitative characterization of charge density and the Fermi energy in graphene. We will rely on this section on the analytical results reported in [6,7,8].…”

Section: Graphene Charge Densities and Fermi Energy As Function Of Gamentioning

confidence: 99%

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

Зебрев

Shostachenko

2019

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

Near-interfacial oxide traps and chemical impurities on the graphene surface or at the graphene-dielectric interface can be a source of intentional or unintentional doping of graphene sheet. The efficiency of such chemical doping can vary in a wide range depending on parameters of graphene field effect devices. Mechanisms of such sensitivity of doping efficiency to the device characteristics need to be understood. The objective of this paper is to theoretically derive the analytical relations, adapted to the explicit calculation of graphene chemical doping.

show abstract

Graphene Field Effect Transistors: Diffusion-Drift Theory

Cited by 23 publications

References 19 publications

High-speed double layer graphene electro-absorption modulator on SOI waveguide

High-speed double layer graphene electro-absorption modulator on SOI waveguide

Graphene resonant channel transistor

Impact of Extrinsic Interface Traps and Doping Atoms on Conductivity of Graphene Field Effect Devices

Contact Info

Product

Resources

About