High-speed double layer graphene electro-absorption modulator on SOI waveguide

Giambra, Marco Angelo; Sorianello, Vito; Mišeikis, Vaidotas; Marconi, Simone; Montanaro, Alberto; Galli, P.; Pezzini, Sergio; Coletti, Camilla; Romagnoli, M.

doi:10.1364/oe.27.020145

Cited by 68 publications

(81 citation statements)

References 32 publications

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“… 7 , 9 , 11 The ultrafast electron excitation dynamics (< 50 fs) 12 upon optical excitation, and the consequent short relaxation time, of the order of few ps, 12 enable high-speed devices. 13 Fast graphene photodetectors (GPDs) have been demonstrated, 8 , 14 − 19 with bandwidth > 100 GHz. 17 − 19 In terms of speed, such devices can compete with Ge-based PDs.…”

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confidence: 99%

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

et al. 2020

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We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p−n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 10 10 cm −2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K −1 , enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

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confidence: 99%

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

et al. 2020

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“…Moreover, the dielectric permittivity of hBN is rather low compared to existing high-κ dielectrics 29 , with a value close to that of SiO 2 (ϵ r ∼ 4). This low dielectric constant and reduced breakdown voltage (see section V in SI) compromises not only the power consumption and the ability to reach high modulation efficiencies at reasonably low drive voltages but also limits the IL and the ER of the modulators 1,9 . We thus integrate HfO 2 , a high-κ dielectric material, within the hBN-encapsulated graphene electrodes (see the sketch in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…high-speed 8,9 , relatively high modulation efficiencies 10 and temperature stability 8 . These devices are all based on CMOS compatible materials 7,[10][11][12][13] , where CMOS design and fabrication techniques can be further leveraged to decrease costs.…”

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confidence: 99%

“…In this framework, the quality of graphene appears as a valid turnaround to overcome this fundamental limitation. A high electron mobility is expected to minimize the overall resistance and reduce the insertion loss (IL) 1,9 , thus increasing the bandwidth and the extinction ratio (ER). However, the quality of graphene is very sensitive to its environment, e.g.…”

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2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Agarwal¹,

Terrés²,

Orsini³

et al. 2020

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Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the first 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This novel combination of materials allows for a high-quality modulator device with record high performances: a ∼39GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high speed modulators. This first demonstration of 2D-3D integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

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“…For the electro-absorption modulation, it utilizes the change in the optical absorption of graphene induced by the shift of Fermi level produced by electrical gating [40]. Giambra et al [41] demonstrated a broadband electro-absorption modulator with 29 GHz bandwidth by integrating the dual-layer graphene capacitor on the passive SOI waveguide. Besides the dual-layer graphene capacitor, Shu et al [42], Hu et al [43], and Sorianello et al [44] demonstrated the graphene-oxide-silicon capacitor-based waveguide-integrated modulators, in which the gate voltage is applied through the intentionally doped silicon waveguide.…”

Section: Waveguide-integrated Graphene Photonic Devices For Communicamentioning

confidence: 99%

Recent Progress in Waveguide-Integrated Graphene Photonic Devices for Sensing and Communication Applications

et al. 2020

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Graphene is a two-dimensional material with numerous intriguing optical properties, such that graphene photonic devices have attracted great interest for sensing and communication applications. However, surface-illuminated graphene photonic devices usually suffer from weak light-matter interactions due to the atomic-layer thickness of graphene, seriously limiting the performances of such devices. To tackle this problem, waveguide-integrated graphene photonic devices have been demonstrated since 2010, which offer the advantage of much longer interaction length between the evanescent field of the optical waveguide and graphene than the surface-illuminated devices. Moreover, the fabrication of waveguide-integrated graphene photonic devices is compatible with CMOS technology, allowing potentially low-cost and high-density on-chip integration. To date, a tremendous interest is growing in the hybrid integration platform composed of graphene and silicon photonic integrated circuits. In this paper, we review the recent progress in waveguide-integrated graphene photonic devices and their applications in sensing and communication.

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High-speed double layer graphene electro-absorption modulator on SOI waveguide

Cited by 68 publications

References 32 publications

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Recent Progress in Waveguide-Integrated Graphene Photonic Devices for Sensing and Communication Applications

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