Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene

“…15,16 Successful operation of graphene field-effect transistors (GFETs) has been demonstrated at radio frequencies. [17][18][19][20] In the THz range, room-temperature detection with GFETs has been reported up to 3.11 THz. [21][22][23] Thus far, even the best graphene-based FET THz detectors have had noise-equivalent powers (NEPs) close to two orders of magnitude higher than those demonstrated in other material systems such as Si MOSFETs (>17 pW/Hz 0.5 ) 7,8 and GaN high-electron mobility transistors (40 pW/Hz 0.5 ), 9 or than the NEPs of other detector technologies like YBCO bolometers (200 pW/Hz 0.5 ), 24 and zerobias Schottky diode detectors (<20 pW/Hz 0.5 ).…”

An Accurate Empirical Model Based on Volterra Series for FET Power Detectors

“…This condition has two implications when setting up the model. First, in a zero-bias FET, the feedback capacitance [17]. The strong feedback (memory) implies that the linear and nonlinear elements are interwoven in the equivalent circuit.…”

Epitaxial Graphene

“…In addition, state-of-the-art FET performance was obtained for devices grown on a 50.8-mm wafer [90] and a graphene FET with a deembedded cutoff frequency of 200 GHz for a 210-nm gate on a single terrace; see Figure 18.12 [43]. FETs for linear resistive mixers and detectors operating in the radio-frequency (RF) to mm-wave have also been demonstrated [92,93]. FETs for linear resistive mixers and detectors operating in the radio-frequency (RF) to mm-wave have also been demonstrated [92,93].…”