Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates

Kim, Jungkil; Lee, Dae Hun; Kim, Woo Jung; Choi, Suk‐Ho

doi:10.1021/acsami.5b07773

Cited by 38 publications

(38 citation statements)

References 32 publications

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“…In contrast, graphene reacts with XeF 2 to form fluorographene (FG) 21 – 24 , a wide band-gap semiconducting monolayer 21 , 22 with composition C 4 F, in the case that only one side is exposed 22 . There have been several demonstrations that take advantage of this selectivity to use graphene as an etch mask for shaping MoS 2 16 , as a mask to etch underlying silicon 25 – 27 , and to create a sacrificial release layer to suspend graphene membranes on silicon on insulator 17 , 22 . Our innovation has been to apply this etch selectivity to access buried graphene layers embedded within the heterostructures and as masks for patterning the underlying layers.…”

Section: Introductionmentioning

confidence: 99%

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

et al. 2018

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Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V−1 s−1 at carrier density of 4 × 1012 cm−2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

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Section: Introductionmentioning

confidence: 99%

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

et al. 2018

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“…The typical MacEtch process starts by patterning catalysts composed of noble metals (Au, Pt, Pd, Ag, Cu, Ni, etc. ) or graphene on a semiconductor substrate or epitaxial structure. The catalyst layer can be patterned into any arbitrary geometry such as a mesh, dots, or trenches with micro‐ or nano‐scale dimensions .…”

Section: Introductionmentioning

confidence: 99%

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Kim

Mohseni

Balasundaram

et al. 2017

Adv Funct Materials

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Metal-assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet etching method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves as the catalyst. However, producing vertical via arrays using MacEtch, which requires a pattern of discrete metal disks as the catalyst, has often been challenging because of the detouring of individual catalyst disks off the vertical path while descending, especially at submicron scales. Here, the realization of ordered, vertical, and high aspect ratio silicon via arrays by MacEtch is reported, with diameters scaled from 900 all the way down to sub-100 nm. Systematic variation of the diameter and pitch of the metal catalyst pattern and the etching solution composition allows the extraction of a physical model that, for the first time, clearly reveals the roles of the two fundamental kinetic mechanisms in MacEtch, carrier generation and mass transport. Ordered submicron diameter silicon via arrays with record aspect ratio are produced, which can directly impact the through-silicon-via technology, high density storage, photonic crystal membrane, and other related applications.

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“…Note that graphene was reported to serve as a catalyst, although weak, for MacEtch of Si, with the etch rate being limited to a few nm per min. [ 42 ] The non‐catalytic behavior of graphene on GaAs could be attributed to the three orders of magnitude higher surface states density of GaAs compared with Si, leading to the electrochemically generated holes being captured at the graphene/GaAs interface. [ 43 ] In addition, graphene has been shown to be a poor electrocatalyst when it is in pristine condition, [ 44 ] which might also prevent the graphene‐catalyzed etching process to be observed on GaAs.…”

Section: Resultsmentioning

confidence: 99%

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

Namiki

Huang

Soares

et al. 2021

Advanced Photonics Research

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III–V semiconductor‐based photodiodes with graphene incorporated have been studied in recent years due to the attractive optoelectronic properties of graphene, including optical transparency and enhanced photoresponsivity. The photoresponsivity can be further improved by converting the semiconductor surface into a 3D antireflection (AR) structure. However, difficulties in transferring graphene on top of structured surfaces degrade the interfacial quality and limit their photoresponsivity. Herein, a high‐performance GaAs photodiode structure with self‐embedded graphene quantum dot (GQD) and simultaneously formed periodic AR 3D surface texturing is reported, all produced by a one‐step wet etching process in a solution of hydrogen fluoride (HF) and potassium permanganate (KMnO4) using graphene as a transparent mask. Compared with the planar counterpart without graphene, the photodiodes demonstrated here show an enhancement of photocurrent by 22 times, photoresponsivity by 25 times, and normalized photocurrent to dark current ratio by approximately two orders of magnitude. The improved photoresponsivity of 9.31 mA W−1 is attributed to the increased absorption from AR texturing and the enhanced heterointerface carrier transfer from GQDs to GaAs. This simple, clean yet effective method enables the monolithic incorporation of graphene and graphene‐derived materials on 3D semiconductor structures for applications across a wide range of wavelengths.

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Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates

Cited by 38 publications

References 32 publications

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

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