The reconstruction of transcriptional regulatory networks (TRNs) is a long-standing challenge in human genetics. Numerous computational methods have been developed to infer regulatory interactions between human transcriptional factors (TFs) and target genes from high-throughput data, and their performance evaluation requires gold-standard interactions. Here we present a database of literature-curated human TF-target interactions, TRRUST (transcriptional regulatory relationships unravelled by sentence-based text-mining, http://www.grnpedia.org/trrust), which currently contains 8,015 interactions between 748 TF genes and 1,975 non-TF genes. A sentence-based text-mining approach was employed for efficient manual curation of regulatory interactions from approximately 20 million Medline abstracts. To the best of our knowledge, TRRUST is the largest publicly available database of literature-curated human TF-target interactions to date. TRRUST also has several useful features: i) information about the mode-of-regulation; ii) tests for target modularity of a query TF; iii) tests for TF cooperativity of a query target; iv) inferences about cooperating TFs of a query TF; and v) prioritizing associated pathways and diseases with a query TF. We observed high enrichment of TF-target pairs in TRRUST for top-scored interactions inferred from high-throughput data, which suggests that TRRUST provides a reliable benchmark for the computational reconstruction of human TRNs.

Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V−1 s−1 at carrier density of 4 × 1012 cm−2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

is a promising material for nanoelectronics; however, the lack of nanofabrication tools and processes has made it very challenging to realize nanometer-scale electronic devices from monolayer MoS 2 . Here, we demonstrate the fabrication of monolayer MoS 2 nanoribbon field-effect transistors as narrow as 30 nm using scanning probe lithography (SPL). The SPL process uses a heated nanometer-scale tip to deposit narrow nanoribbon polymer structures onto monolayer MoS 2 . The polymer serves as an etch mask during a XeF 2 vapor etch, which defines the channel of a field-effect transistor (FET). We fabricated seven devices with a channel width ranging from 30 to 370 nm, and the fabrication process was carefully studied by electronic measurements made at each process step. The nanoribbon devices have a current on/off ratio > 10 4 and an extrinsic field-effect mobility up to 8.53 cm 2 /(V s). By comparing a 30 nm wide device with a 60 nm wide device that was fabricated on the same MoS 2 flake, we found the narrower device had a smaller mobility, a lower on/off ratio, and a larger subthreshold swing. To our knowledge, this is the first published work that describes a working transistor device from monolayer MoS 2 with a channel width smaller than 100 nm.

Atomic membranes of monolayer 2D materials represent the ultimate limit in the size of nano-electromechanical systems. However, new properties and new functionalities emerge by looking at the interface between layers in heterostructures of 2D materials. Here, we demonstrate the integration of 2D heterostructures as tunable nano-electromechanical systems, exploring the competition between the mechanics of the ultrathin membrane and the incommensurate van der Waals interface. We fabricate electrically contacted 5 or 6 μm circular drumheads of suspended heterostructure membranes of monolayer graphene on monolayer molybdenum disulfide (MoS 2 ), which we call a 2D bimorph. We characterize the mechanical resonance through electrostatic actuation and laser interferometry detection. The 2D bimorphs have resonance frequencies of 5−20 MHz and quality factors of 50−700, comparable to resonators from monolayer or few-layer 2D materials. The frequencies and eigenmode shapes of the higher harmonics display split degenerate modes, showing that the 2D bimorphs behave as membranes with asymmetric tension. The devices display dynamic ranges of 44 dB, with an additional nonlinearity in the dissipation at small drive. Under electrostatic frequency tuning, devices display a small tuning of ∼20% compared with graphene resonators, which have >100%. In addition, the tuning shows a kink that deviates from the tensioned membrane model for atomic membranes and corresponds with a changing in stress of 14 mN/m. A model that accounts for this tuning behavior is the onset of interlayer slip in the heterostructure, allowing the tension in the membrane to relax. Using density functional theory simulations, we find that the change in stress at the kink is much larger than the predicted energy barrier for interlayer slip of 0.102 mN/m in an incommensurate 2D heterostructure but smaller than the energy barrier for an aligned graphene bilayer of 35 mN/m, suggesting a local pinning effect at ripples or folds in the heterostructure. Finally, we observe an asymmetry in tuning of the full width at half-maximum that does not exist in monolayer resonators. These findings demonstrate a new class of nano-electromechanical systems from 2D heterostructures and unravel the complex interaction of membrane morphology versus interlayer adhesion and slip on the mechanics of incommensurate van der Waals interfaces.

A new compound material of 2D hydrofluorinated graphene (HFG) is demonstrated whose relative hydrogen/fluorine concentrations can be tailored between the extremes of either hydrogenated graphene (HG) and fluorinated graphene (FG). The material is fabricated through subsequent exposures to indirect hydrogen plasma and xenon difluoride (XeF2). Controlling the relative concentration in the HFG compound enables tailoring of material properties between the extremes offered by the constituent materials and in‐plane patterning produces micrometer‐scale regions with different surface properties. The utility of the technique to tailor the surface wettability, surface friction, and electrical conductivity is demonstrated. HFG compounds display wettability between the extremes of pure FG with contact angle of 95° ± 5° and pure HG with contact angle of 42° ± 2°. Similarly, the HFG surface friction may be tailored between the two extremes. Finally, the HFG electrical conductivity tunes through five orders of magnitude when transitioning from FG to HG. When combined with simulation, the electrical measurements reveal the mechanism producing the compound to be a dynamic process of adatom desorption and replacement. This study opens a new class of 2D compound materials and innovative chemical patterning with applications for atomically thin 2D circuits consisting of chemically/electrically modulated regions.