Graphene/Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Seol, Jeong-Hoon; Kang, Shuai; Lee, Chang-Ju; Won, Chul-Ho; Park, Hongsik; Lee, Jung‐Hee; Hahm, Sung−Ho

doi:10.1109/jsen.2016.2594185

Cited by 7 publications

(2 citation statements)

References 9 publications

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“…In particular, it has been reported that the optical gain is significantly dominated by absorption in the GaN channel layer rather than the AlGaN barrier 25 . Moreover, to further improve photoresponsivity of AlGaN/GaN heterostructure, nanostructures such as ZnO nanorods or graphene are introduced between the source and drain electrodes 26 , 27 .…”

Section: Introductionmentioning

confidence: 99%

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Baek

Lee

Cho

et al. 2021

Sci Rep

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Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source–drain dark current increases as the gate bias increases from − 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.

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Section: Introductionmentioning

confidence: 99%

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Baek

Lee

Cho

et al. 2021

Sci Rep

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“…The trend of photoelectric detection is advancing toward multiband detection, miniaturization, and high integration within one substrate. To accomplish multichannel detection to broadband electromagnetic radiation, independent photodetectors based on different semiconductors—such as GaN for ultraviolet (UV), Si for visible, and InGaAs for near‐infrared (NIR) bands—are usually assembled in one imaging system. However, such a conventional technique is being challenged by the demand for system miniaturization.…”

mentioning

confidence: 99%

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Deng

Bao

Zhu

et al. 2019

Advanced Optical Materials

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However, such a conventional technique is being challenged by the demand for system miniaturization. So far, several methods have been proposed to extend the response spectra of a single photodetector. One method involves heterogeneously integrating photodetectors based on materials with different bandgaps (such as Si and III−V compounds) on the same substrate by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to introduce extra absorption layers. [7][8][9][10] Unfortunately, owing to lattice mismatches, significant leakage current frequently occurs in the dark, and the manufacturing is complicated and expensive. Another approach is to integrate a metasurface into a semiconductor by local plasmonic resonances. [11][12][13][14][15] However, such detectors suffer from extremely low quantum efficiency due to energy loss in the metallic metasurface.In recent years, 2D materials based on van der Waals heterojunctions have been extensively investigated as potential candidates for next-generation optoelectronic devices. [16][17][18] Different from conventional bulk semiconductors with covalent bonds, the lack of dangling bonds at the surface of 2D materials enables the realization of interfaces with fewer defects and lattice mismatches than conventional semiconductor devices, [19] offering us an excellent opportunity to integrate 2D materials with conventional At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n-i-n heterojunction phototransistor by integrating multi-layered MoS 2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 10 5 A W -1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/ InGaAs n-i-n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W -1 to -4 × 10 5 A W -1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.The trend of photoelectric detection is advancing toward multiband detection, miniaturization, and high integration within one substrate. To accomplish multichannel detection to broadband electromagnetic radiation, independent photodetectors based on different semiconductors-such as GaN [1,2] for ultraviolet (UV), Si [3,4] for visible, and InGaAs [5,6] for near-infrared (NIR) band...

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Fabrication and characterization of graphene induced Metal Semiconductor Metal (MSM) structure for detection and sensing applications

Alam

Shuja

Jamil

et al. 2021

Eur. Phys. J. Appl. Phys.

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The demand for miniaturization of electronic devices has lent to the development of graphene-based hybrid structures, which include the Metal-Semiconductor-Metal device. In this work, we develop such a device by growing monolayer graphene layer on top of Nickel to form the basic structural matrix. Four different variants of the MSM unit structures have been developed to assess their potential in next generation electronics. The presence of graphene in the original matrix was confirmed via Atomic Force Microscopy, and the optical response of the graphene layer was further studied using Spectroscopic Ellipsometry in UV-Vis-NIR regime; Forouhi-Bloomer model was used to analyze the ellipsometry data. Hall effect and other electrical characterization measurements were conducted to analyze the electrical properties of the fabricated devices.

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Graphene/Al₂O₃/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Cited by 7 publications

References 9 publications

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Fabrication and characterization of graphene induced Metal Semiconductor Metal (MSM) structure for detection and sensing applications

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Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Cited by 7 publications

References 9 publications

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Fabrication and characterization of graphene induced Metal Semiconductor Metal (MSM) structure for detection and sensing applications

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Graphene/Al₂O₃/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands