Integration of MoS₂ with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands

Abstract

However, such a conventional technique is being challenged by the demand for system miniaturization. So far, several methods have been proposed to extend the response spectra of a single photodetector. One method involves heterogeneously integrating photodetectors based on materials with different bandgaps (such as Si and III−V compounds) on the same substrate by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) to introduce extra absorption layers. [7][8][9][10] Unfortunately, owing to lattice mismatches, significant leakage current frequently occurs in the dark, and the manufacturing is complicated and expensive. Another approach is to integrate a metasurface into a semiconductor by local plasmonic resonances. [11][12][13][14][15] However, such detectors suffer from extremely low quantum efficiency due to energy loss in the metallic metasurface.In recent years, 2D materials based on van der Waals heterojunctions have been extensively investigated as potential candidates for next-generation optoelectronic devices. [16][17][18] Different from conventional bulk semiconductors with covalent bonds, the lack of dangling bonds at the surface of 2D materials enables the realization of interfaces with fewer defects and lattice mismatches than conventional semiconductor devices, [19] offering us an excellent opportunity to integrate 2D materials with conventional At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS 2 /InAlAs/InGaAs n-i-n heterojunction phototransistor by integrating multi-layered MoS 2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 10 5 A W -1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS 2 /InAlAs/ InGaAs n-i-n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 10 5 A W -1 to -4 × 10 5 A W -1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS 2 /InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.The trend of photoelectric detection is advancing toward multiband detection, miniaturization, and high integration within one substrate. To accomplish multichannel detection to broadband electromagnetic radiation, independent photodetectors based on different semiconductors-such as GaN [1,2] for ultraviolet (UV), Si [3,4] for visible, and InGaAs [5,6] for near-infrared (NIR) band...

Organic photodetectors: materials, device, and challenges

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Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

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