Ultraviolet
photodetectors (UVPDs) which play important roles in
military and civil applications are normally fabricated by using wide
band gap semiconductors (WBSs) as building blocks. Unfortunately,
the commercialization of UVPDs based on WBSs is often limited by their
relatively high fabrication cost owing to the use of very complicated
growth instruments. In this work, a sensitive UVPD based on non-WBS
lead sulfide (PbS) with a relatively small band gap was proposed.
Device analysis revealed that the UVPD made of 48.5 nm PbS nanofilm
was highly sensitive to UV illumination at 365 nm. Specifically, the
responsivity and specific detectivity under 365 nm illumination were
22.25 A W–1 and 4.97 × 1012 Jones,
respectively, which are comparable to or better than most of the conventional
WBS-based UVPDs. The PbS nanofilm-based UVPD also exhibits excellent
environmental stability. Experimental results and simulations based
on technology computer-aided design software confirmed that the abnormal
properties of PbS nanofilms are related to the relatively thin thickness
and wavelength-dependent absorption coefficients. These results open
up an opportunity for narrow band gap semiconductors to realize low-cost-sensitive
UVPDs in future optoelectronic devices and systems.
In this study, simple-structured wavelength sensors were
developed
by depositing two back-to-back Au/MAPbI3/Au photodetectors
on an MAPbI3 single crystal. This sensor could quantitatively
distinguish wavelengths. Further device analysis showed that both
photodetectors possess entirely disparate optoelectronic properties.
Consequently, the as-developed wavelength sensor could accurately
distinguish incident-light wavelengths ranging from 265 to 860 nm
with a resolution of less than 1.5 nm based on the relation between
the photocurrent ratios of both photodetectors and the incident light
wavelengths. Notably, a high resolution and wide detection range are
among the optimum reported values for such sensors and enable full-color
imaging. Furthermore, technology computer-aided design (TCAD) simulations
showed that a mechanism involved in distinguishing wavelengths is
attributed to the wavelength-dependent photon generation rate in MAPbI3 single crystals. The high-performance MAPbI3 wavelength
sensor can potentially drive the research progress of perovskites
in wavelength recognition and full-color imaging.
Dual-band photodetectors (DBPDs) have played an essential role in multispectral information monitoring, including civil and military areas. Traditional multispectral detectors usually consist of multiple monochromatic detectors or use filters to...
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