1996
DOI: 10.2109/jcersj.104.939
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Grain Size Dependency on the Creep Rate in Hot-Pressed Silicon Nitride

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Cited by 7 publications
(9 citation statements)
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“…In spite of these discrepancies, it is generally agreed that the steady‐state creep for silicon nitride (and silicon carbide) with a grain boundary glassy phase proceeds by a solution‐precipitation mechanism through the amorphous (liquid) grain boundary phase, which has been modeled by Raj 27 and by Wakai 28 . Grain‐size dependence p takes a value of about 1–3 50–52 . This means a strong dependence of creep rate on grain size: The creep rate is supposed to increase at least for 1–3 orders of magnitude with the grain size decrease from micron size (500–1000 nm or larger) as in most of the microcrystalline silicon nitride studies to nanometer size as in the nano–nano composites of the present study.…”
Section: Resultsmentioning
confidence: 99%
“…In spite of these discrepancies, it is generally agreed that the steady‐state creep for silicon nitride (and silicon carbide) with a grain boundary glassy phase proceeds by a solution‐precipitation mechanism through the amorphous (liquid) grain boundary phase, which has been modeled by Raj 27 and by Wakai 28 . Grain‐size dependence p takes a value of about 1–3 50–52 . This means a strong dependence of creep rate on grain size: The creep rate is supposed to increase at least for 1–3 orders of magnitude with the grain size decrease from micron size (500–1000 nm or larger) as in most of the microcrystalline silicon nitride studies to nanometer size as in the nano–nano composites of the present study.…”
Section: Resultsmentioning
confidence: 99%
“…Grain size has a limited effect on creep rate. Yoon et al 99 showed a minor increase in compressive creep rate with decreasing grain size, which is likely due to a reduction in the length of the diffusion path for dissolution-precipitation. Wiederhorn et al 100 reported that a factor of two increase in grain size had no effect on the creep rate of Yb-containing Si 3 N 4 .…”
Section: Creep In Si 3 N 4 and Sialonsmentioning
confidence: 99%
“…Grain size has a limited effect on creep rate. Yoon et al 99 . showed a minor increase in compressive creep rate with decreasing grain size, which is likely due to a reduction in the length of the diffusion path for dissolution–precipitation.…”
mentioning
confidence: 98%
“…In contrast to Akatsu et al , 24 Roebben and colleagues 13,32 have shown that the peak could be reversibly found upon heating and cooling cycles in hot‐pressed Si 3 N 4 with Al 2 O 3 +Y 2 O 3 +TiN as a sintering aid 13 . Doen et al , 33 Yoon et al , 31 and Sakaguchi 30 have also indicated the appearance of peak in Si 3 N 4 ‐based ceramics with yttria and alumina additives, through the first heating stage. However, annealing (for instance, at 1160°C in the results presented by Sakaguchi et al 34 ) has led to a dramatic decline in the peak amplitude.…”
Section: Introductionmentioning
confidence: 94%