Grain Growth and Electrical Properties in ZnO Varistors with Various Valence States of Additions

Chen, Ying–Chung; Shen, Chi–Yen; Chen, Hone-Zern; Wei, Yin-Fang; Wu, Long

doi:10.1143/jjap.30.84

Cited by 23 publications

(6 citation statements)

References 17 publications

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“…Such improvements in electrical behavior due to the addition of oxides of cobalt and manganese have also been reported for Bi 2 O 3 -doped ZnO varistor systems. 28,29 Kuo et al 13 also observed such an improvement in behavior in an investigation of the effect of Mn 3 O 4 in ZnO-0.5 mol% V 2 O 5 prepared by microwave sintering. The combination of all the additives gave the best properties.…”

Section: (3) I-v Characteristicsmentioning

confidence: 82%

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium‐Doped Zinc Oxide Varistors

Hng

Knowles

2000

Journal of the American Ceramic Society

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The effects of the oxide additives MnO 2 , Co 3 O 4 , and Sb 2 O 3, commonly incorporated in commercial Bi 2 O 3 -doped ZnO varistors, on the current-voltage characteristics and microstructure of 0.25 mol% V 2 O 5 -doped ZnO varistors have been studied. MnO 2 is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V 2 O 5 content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO 2 . Further increases in the V 2 O 5 content of 1 mol% MnO 2 -doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb 2 O 3 is incorporated.

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Section: (3) I-v Characteristicsmentioning

confidence: 82%

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium‐Doped Zinc Oxide Varistors

Hng

Knowles

2000

Journal of the American Ceramic Society

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“…The samples were fabricated using a conventional ceramic process [17,18], with a nominal composition of (97 − x) mol% ZnO + 1.0 mol% Bi2O3 + 1.0 mol% Sb2O3 + 0.2 mol% Co2O3 + 0.2 mol% MnO2 + 0.3 mol% Cr2O3 + 0.3 mol% NiO + x mol% B2O3 (x = 0.0, 1.5, 2.5, 3.5, 4.5, 5.5). The powder mixtures were ball-milled in a polyethylene bottle with ZrO2 balls for 24 h in deionized water.…”

Section: Methodsmentioning

confidence: 99%

“…In present, the majority of commercially available varistors are based on ZnO-Bi 2 O 3 systems where Bi 2 O 3 plays an essential role in liquid sintering and the forming of nonlinear behavior [12][13][14][15]. Other dopants, such as Sb 2 O 3 , Cr 2 O 3 , CoO, NiO and MnO 2 , are added as assistant additives to increase the nonlinear coefficient (˛) value and the resistance to degradation [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Influence of B2O3 additives on microstructure and electrical properties of ZnO–Bi2O3–Sb2O3-based varistors

Duan

et al. 2011

Journal of Alloys and Compounds

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“…Due to the high reactivity with oxygen, the formation of rare-earth silicides requires either ultra high vacuum or protective capping layer to prevent them from oxidation. 31 Only under UHV deposition and annealing to react the Gd film with Si nanowires, freestanding Gd nanowires were formed. A further advantage in using well-aligned Si nanowires as the templates is that the dimensions of nanowires could be facilely controlled by the electroless etching process.…”

Section: Resultsmentioning

confidence: 99%

Field Emission and Magnetic Properties of Free-Standing Gd Silicide Nanowires Prepared by Reacting Ultrahigh Vacuum Deposited Gd Films with Well-Aligned Si Nanowires

Chu

Hung

Wang

et al. 2011

J. Electrochem. Soc.

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The well-aligned gadolinium silicide ͑GdSi 1.7 ͒ nanowire arrays were prepared by reacting ultrahigh vacuum deposited Gd with silicon nanowire arrays. The diameter of nanowires is 100 nm in average and lengths, thereof, were about several micrometers. Field emission measurement showed that the turn-on field of gadolinium silicide nanowires is as low as 0.75 V/m at a current density of 10 A/cm 2 . The current density of 1 mA/cm 2 can be reached at an applied field of 2.1 V/m. The field enhancement factor was determined to be 1222. Furthermore, the arrayed nanowires exhibit the ferromagnetic property at room temperature, which is attributed to magnetically uncompensated Gd atoms.Because the discovery of a number of superior physical properties for carbon nanotubes, 1 one dimensional ͑1-D͒ nanomaterials have drawn much attention for their potential applications. [2][3][4] In particular, metal silicide nanowires ͑NWs͒ have attracted much interest for use in the future electronic and magnetic devices. 5,6 Many silicides possess advantages such as low resistivity, good thermal stability, and low contact resistance with Si, which are promising candidates for improving the device performance and for the applications in optical communications, infrared detection, and displays. [7][8][9] The rare-earth metal silicides have been widely studied for several decades due to its extremely low Schottky barrier height ͑0.3 eV͒ 10,11 on n-type silicon. As a result, rare-earth silicides form nearly Ohmic contact with silicon and have great potential as contacts and interconnections. A number of rare-earth silicides were reported in the forms of thin film and nanostructures. In particular, self-assembled rare-earth silicide NWs are easily obtained with high aspect ratio due to their unique lattice mismatch with Si. 12,13 One of the rare-earth silicides, gadolinium ͑Gd͒ silicide, has been reported to grow in the form of stable epitaxial thin film on silicon. 14,15 Excellent electrical properties and unique magnetic characteristics were disclosed. 16,17 On the other hand, the metal silicide film and molybdenum Spindt-type arrays have great field emission properties, 18-20 which were attributed to the low work function, high conductivity, and good thermal stability. Recently, metal silicide nanostructures exhibit superior field emission property due to the mechanical stability, large aspect ratio, and unique surface effect. This excellent property makes metal silicide nanostructures possess potential as field emitters. [21][22][23][24][25] Furthermore, the magnetic properties of non-ferromagnetic materials in nano form have attracted a great deal of interests due to their distinct characteristics from the bulk materials. For example, ferromagnetism was observed in NiO nanoparticles ͑NPs͒ and in Co 3 O 4 nanowires, both possessed antiferromagnetic properties in bulk. 26,27 Due to the large surface-to-volume ratio and the enormous number of uncompensated surface atoms, the magnetic properties were changed considerably in these NPs and NWs...

show abstract

Grain Growth and Electrical Properties in ZnO Varistors with Various Valence States of Additions

Cited by 23 publications

References 17 publications

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium‐Doped Zinc Oxide Varistors

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium‐Doped Zinc Oxide Varistors

Influence of B2O3 additives on microstructure and electrical properties of ZnO–Bi2O3–Sb2O3-based varistors

Field Emission and Magnetic Properties of Free-Standing Gd Silicide Nanowires Prepared by Reacting Ultrahigh Vacuum Deposited Gd Films with Well-Aligned Si Nanowires

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