Influence of B2O3 additives on microstructure and electrical properties of ZnO–Bi2O3–Sb2O3-based varistors

Li, Fenghua; Xu, Gaojie; Duan, Lijie; Li, Yali; Li, Yong; Cui, Ping

doi:10.1016/j.jallcom.2010.10.074

Cited by 27 publications

(11 citation statements)

References 23 publications

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“…For the B 2 O 3 added samples, the low melting point B 2 O 3 together with Bi 2 O 3 caused the liquid-phase sintering and large amounts of ZnO grains appeared. But unlike the report of Liu et al [19], the eventual average grain sizes were decreased. This unusual decrease was probably due to the sintering temperature as low as 850°C.…”

Section: Resultscontrasting

confidence: 83%

“…B 2 O 3 has low melting temperature (450°C) and could form stable glasses in a wide compositional range when substituted for boron in borate based glasses [16][17][18]. Some works showed that B 2 O 3 could improve the electrical stability of the varistors and enhance nonlinear characteristic due to its low melting point [19,20]. However, there was few works focusing on the influence of B 2 O 3 on the ZnO varistors sintered at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors

Chu

et al. 2015

J Mater Sci: Mater Electron

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High voltage gradient ZnO-Bi 2 O 3 -based varistor ceramics doped with different amounts of B 2 O 3 were prepared by the conventional ceramics processing at low temperature and their phase transformation, microstructure and electrical properties were investigated. B 2 O 3 addition promoted the formation of a liquid phase along the grain boundary and triple junctions of the ZnO grains and improved electrical properties. ZnO-Bi 2 O 3 -based varistors with nonlinearity coefficients (a) exceeding 45, the leakage current (I L ) not more than 0.1 lA and breakdown fields ranging from 880 to 1450 V/mm were obtained by doping with 0.5-2 wt% B 2 O 3 at the sintering temperature of 850°C and dwelling time of 5 h.

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Section: Resultscontrasting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors

Chu

et al. 2015

J Mater Sci: Mater Electron

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“…From then on, lots of literatures about ZnO-Pr 6 [9,13,14,17,18,20]. Compared with ZnO-Bi 2 O 3 based varistors, in which the doping effects of most additives have been well studied [21][22][23][24][25][26], however, the doping effects of many additives on ZnO-Pr 6 O 11 based varistors have been still not clear yet. Some promising additives, such as SnO 2 , which were commonly found in the well-studied ZnO-Bi 2 O 3 system are not reported in ZnO-Pr 6 O 11 system.…”

Section: Introductionmentioning

confidence: 99%

Effect of SnO2 doping on microstructural and electrical properties of ZnO–Pr6O11 based varistor ceramics

Feng

Peng

et al. 2011

Journal of Alloys and Compounds

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a b s t r a c tZnO-Pr 6 O 11 based varistor ceramics doped with 0-2.0 mol% SnO 2 were fabricated by sintering samples at 1300 • C for 2 h with conventional ceramic processing method. X-ray diffraction analysis indicated that the doped SnO 2 reacted with praseodymium oxides during sintering, generating Pr 2 Sn 2 O 7 phase. Through scanning electron microscopy, it was found that the doping of SnO 2 played a role against the growth of ZnO grains. Capacitance-voltage analysis revealed that the doped SnO 2 acted as a donor in the varistor. The measured electric-field/current-density characteristics of the samples showed that the varistor voltage increased with the increase of SnO 2 doping content, when the SnO 2 content was no more than 1.0 mol%; with the SnO 2 content up to no more than 0.5 mol%, the doping of SnO 2 could increase the nonlinear coefficient; but, when the SnO 2 doping content was further increased, the nonlinear coefficient and varistor voltage of the samples decreased, and the leakage current increased.

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“…Therefore, the grain size and density of ZnO increased first then decreased, while the added amount was above 3.5 mol % B 2 O 3 [24]. Fig.…”

Section: Resultsmentioning

confidence: 85%

“…There have also been a large number of studies addressing the effects of several metal oxide additions, such as Bi 2 O 3 , MnO, and Sb 2 O 3 , on the sintering behaviour of ZnO varistors [2,19,20]. However, there are only a few literature reports concerning the electrical and microstructure properties of B 2 O 3 -doped ZnO ceramics [21][22][23][24][25][26]. Glot and Mazurik reported that the introduction of B 2 O 3 into ZnO ceramics improves the stability of their I-V characteristics [25].…”

Section: Introductionmentioning

confidence: 99%

Grain growth kinetics for B2O3-doped ZnO ceramics

Yüksel

Özkan

2015

Materials Science-Poland

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Grain growth kinetics in 0.1 to 2 mol % B 2 O 3 -added ZnO ceramics was studied by using a simplified phenomenological grain growth kinetics equation G n = K 0 ·t·exp(−Q/RT) together with the physical properties of sintered samples. The samples, prepared by conventional ceramics processing techniques, were sintered at temperatures between 1050 to 1250°C for 1, 2, 3, 5 and 10 hours in air. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 0.1 mol % B 2 O 3 -doped ZnO ceramics were found to be 2.8 and 332 kJ/mol, respectively. By increasing B 2 O 3 content to 1 mol %, the grain growth exponent value (n) and the activation energy decreased to 2 and 238 kJ/mol, respectively. The XRD study revealed the presence of a second phase, Zn 3 B 2 O 6 formed when the B 2 O 3 content was 1 mol %. The formation of Zn 3 B 2 O 6 phase gave rise to an increase of the grain growth kinetic exponent and the grain growth activation energy. The kinetic grain growth exponent value (n) and the activation energy for the grain growth of the 2 mol % B 2 O 3 -doped ZnO ceramics were found to be 3 and 307 kJ/mol, respectively. This can be attributed to the second particle drag (pinning) mechanism in the liquid phase sintering.

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Influence of B2O3 additives on microstructure and electrical properties of ZnO–Bi2O3–Sb2O3-based varistors

Cited by 27 publications

References 23 publications

Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors

Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors

Effect of SnO2 doping on microstructural and electrical properties of ZnO–Pr6O11 based varistor ceramics

Grain growth kinetics for B2O3-doped ZnO ceramics

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