Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin films

Abstract

Influence of asdeposited film structure on 100 texture in laserrecrystallized silicon on fused quartz Appl. Phys. Lett. 44, 420 (1984); 10.1063/1.94770Laserrecrystallized polycrystalline silicon resistors for integrated circuit applications

Polycrystalline Silicon for Integrated Circuit Applications

“…Alternately, it can be expressed as [5.60] 2d exp (-qVB/kT) Teff = 3(J'vDT(Efn _ Efp) (5. 39) where DT is the interface trap density (per cm-2 per eV), (J' is the capture cross section, d is the grain size, v is the thermal velocity of the carriers, VB is the height of the potential barrier at the grain boundary, and E fn and E fp are the quasi-Fermi levels for electrons and holes, respectively.…”

Defect Characterization in Monocrystalline Silicon Grown Over SiO2

“…Single crystal growth over amorphous substrates has received considerable attention recently (1)(2)(3)(4)(5)(6)(7)(8). Such structures are potentially useful in the area of solidstate device fabrication.…”

Diode characteristics in laser-recrystallized and conventional polycrystalline silicon

“…It should be noted that while ,the reverse currents in the conventional high temperature process are very similar to the currents obtained in the laser-recrystallized material, the forward currents at the lower doping levels in the conventional process are dominated by high series resistance, Therefore, the on/off ratio of the diodes in the laser-recrystallized material is larger. The reverse current densities of the laser-recrystallized polydiodes reported here are about two orders of magnitude lower than those exhibited by the lateral p-n junctions reported on by Johnson et al [ 2 ] . An analysis of the reverse currents of the diodes fabricated in this experiment has been attempted using the model based on emission from grain boundary traps [3] .…”

“…Forward characteristics of lateral ntp diodes have been shown by Lee et al [ l ] with ideality factors of 1.6. Complete I-V characteristics of a lateral n t p diode in a laser recrystallized polysilicon island have been shown by Johnson et al [ 2 ] where leakage current densities on the order of 5 x A/cm2 were reported at a reverse bias of 2V, p-dope level of 2 x lot6 cmm3. Correlated EBIC-and TEM-micrographs showed a laterally inhomogeneous junction due to enhanced diffusion of dopant atoms along grain boundaries intersecting the implanted metallurgical junction.…”