Defect Characterization in Monocrystalline Silicon Grown Over SiO2

Abstract

165 160 155 --~ 150 ,~ 145 ~= 140 ~ 135 125 120 115 110 Y. Electrochem. S oc.: SOLID-STATE SCIENCE AND TECHNOLOGY A 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 PROBE RADIOS {p,m] Fig. 12. A series of plots of the results of the calibration investigation for several values of the probe spacing. The values of the probe spacings and the corresponding curves are: S ~-25 ~m (A), S = 50 ~rn (B), S = 75 #m (C), and S = 100 ~m (D). In all cases, the Berkowitz-Lux correction factor scheme was used.sufficient to provide sensitivity and yield the value of a = 2 ~an, which was originally used in the generation of the spreading resistance. In addition, to show that the sensitivity is not degraded by variation of the probe spacing, the results of the analysis for several values of the probe spacing are presented in Fig. 12. It is important to emphasize that the curvature must be sufficient to provide for the evaluation of the value of a. Should the curve be found to be flat, this would preclude the use of this procedure. Conclusions

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

“…4͑a͒ were due to microtwin formation. [43][44][45] When the Si SEG was performed at 650°C, ELO did not take place; this was similar with the growth behavior of Si epitaxial layer grown with 5 sccm Si 2 H 6 at 650°C. However, in this case, the ͑110͒ facet was observed at the LOCOS edge instead of ͑111͒ facet, as clearly shown in Fig.…”

Characterization of sidewall defects in selective epitaxial growth of silicon

“…Various authors have reported the presence of defects along the sidewall. [8][9][10] A factor of 10-100 increase in leakage currents has been reported when the junctions intersect the SEG sidewall. The presence of the sidewall defect is considered to be the single most important problem hindering the widespread use of SEG in semiconductor processing because junctions and depletion regions intersecting these sidewall defects will result in undesirable recombination-generation currents.…”

“…2,9,10 The oxide /silicon interface is a location of high internal strain. As a strain relief mechanism, stacking faults could be generated in the silicon material.…”

“…If this situation occurs, the internal stress will be relieved by plastic deformation of silicon. 10,11 Some practical steps have been suggested to reduce the internal strain introduced by the Si overgrowth. 10 The insulating film could be made thinner, which would reduce the internal strain.…”

“…10,11 Some practical steps have been suggested to reduce the internal strain introduced by the Si overgrowth. 10 The insulating film could be made thinner, which would reduce the internal strain. The thermal stress could also be reduced if the thermal coefficient of expansion of the insulator next to the overgrowth is matched to that of silicon.…”