Polycrystalline Silicon for Integrated Circuit Applications

Kamins, T. I.

doi:10.1007/978-1-4613-1681-7

Cited by 348 publications

(156 citation statements)

References 15 publications

(30 reference statements)

Supporting

Mentioning

155

Contrasting

Order By: Relevance

“…Between a dilution ratio of four and six, however, the increase in the optical gap is very steep, followed by an increase to >2.05 eV with further dilution. Sub-bandgap absorption spectra and UV reflectance measurements [8] indicate that these samples still are purely amorphous.…”

Section: Influence Of Hydrogen Dilutionmentioning

confidence: 95%

Comparison of VHF, RF and Dc Plasma Excitation for a-Si:H Deposition with Hydrogen Dilution

et al. 1998

View full text Add to dashboard Cite

A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H 2 dilution ratios are presented, along with optical bandgap, H content, and electronic transport properties in the light-soaked state.H 2 strongly reduces the growth rate for all techniques. The growth rate for the highest H 2 dilution ratio is approximately four times higher for VHF than for DC or RF excitation. In all three cases increasing the substrate temperature reduces the optical gap and the H content C H . Raising the substrate temperature slightly enhances the stability of undiluted films. H 2 dilution increases the optical gap for all three techniques. The H content of RF-and VHF-deposited samples increases with increasing H 2 dilution ratio, while in DC deposition it produces an initial drop of the H content, followed by an increase. In all three cases, H 2 dilution improves the electronic transport properties of the material by roughly a factor of two. The gain in stability is most pronounced for relatively small dilution; in the case of DC deposition, too strong a dilution even has an adverse effect on stability.

show abstract

Section: Influence Of Hydrogen Dilutionmentioning

confidence: 95%

Comparison of VHF, RF and Dc Plasma Excitation for a-Si:H Deposition with Hydrogen Dilution

et al. 1998

View full text Add to dashboard Cite

show abstract

“…[5][6][7] Polysilicon is now often deposited as amorphous silicon due to the lower deposition temperature that can be used, and larger grain size and smaller series resistance that result after annealing. 8 There is relatively little experimental data in the literature on fluorine transport in amorphous, polycrystalline, or single-crystal silicon. Tsai et al 9 presented F depth profiles in high-dose BF 2 -implanted single-crystal Si and showed that significant transport of F occurred during annealing in the temperature range 500-1100°C.…”

mentioning

confidence: 99%

Activation energy for fluorine transport in amorphous silicon

Nash

Schiz

Marsh

et al. 1999

Applied Physics Letters

View full text Add to dashboard Cite

The transport of ion-implanted F in amorphous Si is studied using secondary ion mass spectroscopy and transmission electron microscopy. Significant redistribution of F is observed at temperatures in the range 600–700 °C. The measured F depth profiles are modeled using a simple Gaussian solution to the diffusion equation, and the diffusion coefficient is deduced at each temperature. An activation energy of 2.2 eV±0.4 eV for F transport is extracted from an Arrhenius plot of the diffusion coefficients. It is shown that the F transport is influenced by implantation-induced defects.

show abstract

“…Precisely controllable TEC (thermo-electric cooler) including probe station and semiconductor parameter analyzer was used for the measurements of resistance change in accordance to the temperature variation of nickel oxide film. We calculated average value at the temperature range from of Conduction in polycrystalline materials is a thermally activated process [12] and hence, the resistivity R(T) can be indicated as equation (1), where Ea is the activation energy [13]. Young-Chul Jung Gyohun Koo Jae-Sung Lee Sung-Ho Hahm Yong Soo Lee Calculated TCR value by equation (1) and (2) is drawn in Fig.…”

Section: Resultsmentioning

confidence: 99%

NiO Films Formed at Room Temperature for Microbolometer

Jung¹,

Koo²,

Lee³

et al. 2013

Journal of Sensor Science and Technology

View full text Add to dashboard Cite

Nickel oxide films using RF sputter was formed on the SiO 2 /Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/ o C. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images. Received : Aug. 1, 2013, Revised : Sep. 24, Accepted : Sep. 25, 2013 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Keywords

show abstract

Polycrystalline Silicon for Integrated Circuit Applications

Cited by 348 publications

References 15 publications

Comparison of VHF, RF and Dc Plasma Excitation for a-Si:H Deposition with Hydrogen Dilution

Comparison of VHF, RF and Dc Plasma Excitation for a-Si:H Deposition with Hydrogen Dilution

Activation energy for fluorine transport in amorphous silicon

NiO Films Formed at Room Temperature for Microbolometer

Contact Info

Product

Resources

About