Glow discharge sputtering deposition of thin films of Ag, Cr, Cu, Ni, Pd, Rh and their binary alloys onto NaCl and MgO Experimental parameters and epitaxy

Reniers, François; Delplancke, Marie Paule; Asskali, Abderrahman; Rooryck, Valérie; Sinay, O. Van

doi:10.1016/0169-4332(95)00198-0

Cited by 40 publications

(15 citation statements)

References 15 publications

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“…Most widely used substrates are the single-crystal NaCl (0 0 1) and MgO (0 0 1) cleavage surfaces. Many metals such as Au [1,2], Ti [3,4], Rh [5], Pd [6,7], and others [8] have been applied, to list just a few of the reports. Theoretical investigations of the nucleation and growth process have also been performed [9,10].…”

Section: Introductionmentioning

confidence: 99%

The oriented growth of zirconia thin films on NaCl (001) surface

Yeh

Huang

Gan

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

The oriented growth of zirconia thin films on NaCl (001) surface

Yeh

Huang

Gan

et al. 2006

Journal of Crystal Growth

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“…Such a layer is clearly preferred for electron-transport studies, since twin boundary electron scattering is absent. Reported epitaxial Cu/MgO(001) growth temperatures T s range from room temperature [10,14] to 185°C [15], 50-300°C [16], 300-350°C [17], 370°C [18], and 580°C [13]. However, it is unclear what temperature yields the highest quality Cu layer since most studies determine the crystalline structure only by XRD ω−2θ scans and reflection high energy electron diffraction-techniques which are relatively insensitive to [6,10,13,16].…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, epitaxial growth of Cu(111) on the basal plane of sapphire leads to a twinned structure which is not a "true" single crystal [11][12][13]. In contrast, Cu growth on MgO(001) exhibits a cubeon-cube epitaxial relationship, (001) Cu ||(001) MgO with [100] Cu || [100] MgO , with only one possible crystalline orientation, yielding a Cu single crystal layer without twin boundaries [10,[13][14][15][16][17][18]. Such a layer is clearly preferred for electron-transport studies, since twin boundary electron scattering is absent.…”

Section: Introductionmentioning

confidence: 99%

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

2006

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“…For instance, Raatz and Woltersdorf 50 reported the effect of Ni film thickness on film orientation. McCaffrey et al, 51 Svedberg et al, 52 Reniers et al 53 and Qiu et al 54 studied the effect of growth temperature on the orientation of epitaxial Ni films on MgO(001). Lukaszew et al 55 studied the magneto-optic Kerr effect (the magnetization-induced change in polarization state and/or intensity of the light reflected from the surface of a magnetized medium) of Ni thin films deposited on MgO singlecrystal substrates.…”

Section: Ni On Si (100)mentioning

confidence: 99%

Multifunctional heterostructures integrated on Si (100)

Singamaneni

Prater

Narayan

2015

Emerging Materials Research

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This paper focuses on the growth of several important oxide systems, including BiFeO 3 (BFO), La 0·7 Sr 0·3 MnO 3 (LSMO), BaTiO 3 (BTO), and non-oxide films including permalloy/MgO and Ni/MgO. It is shown that one can achieve thin-film epitaxy over an extended misfit scale by using the paradigm of DME. This will be critical for the future integration of multifunctional heterostructures onto CMOS-based chips in order to create smart structures for the next-generation solid-state devices. In addition, this paper explores the utility of using laser processing to introduce defect populations that induce magnetism in non-magnetic oxides such as STO and BTO as an alternative to incorporating more traditional magnetic layers into the structure. IntroductionThe integration of complex oxide films and heterostructures within existing electronics can significantly expand the range of functional properties available for device exploitation, including colossal magneto-resistance, magnetocaloric effects, coupled magnetic and polarisation (multiferroic) behaviour, and some interesting physical phenomena including spin, charge and orbital ordering. As a result, there has been a tremendous increase in research related to the deposition of multifunctional thin-film heterostructures for solid-state device technology.1-3 The realization of these expected capabilities requires the integration of various multifunctional materials on substrates of industrial interest, particularly integration with existing silicon (Si)-integrated circuits where total misfit strain can range from 1% up to as much as 25%.4,5 Thus, strain and defect control in these films are essential. The total strain that develops in multilayer thin-film heterostructures has three primary components: (a) lattice misfit arising from the differences in lattice constants between the film and the substrate, (b) thermal misfit arising from differences in coefficients of thermal expansion and (c) microstructural strains arising from defects and alloying elements (dopants). By far the largest of these components is the misfit strain. This paper primarily addresses minimization of the lattice misfit component of the strain.According to conventional wisdom, as outlined under the latticematching epitaxy (LME) paradigm, thin films grow as epitaxial Multifunctional heterostructures integrated on Si (100) Singamaneni, Prater and Narayan ICE Publishing: All rights reserved

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Glow discharge sputtering deposition of thin films of Ag, Cr, Cu, Ni, Pd, Rh and their binary alloys onto NaCl and MgO Experimental parameters and epitaxy

Cited by 40 publications

References 15 publications

The oriented growth of zirconia thin films on NaCl (001) surface

The oriented growth of zirconia thin films on NaCl (001) surface

Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition

Multifunctional heterostructures integrated on Si (100)

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