2009
DOI: 10.1002/mop.24433
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Gilbert upconversion mixers using single‐band/dual‐band LC current combiners

Abstract: The 0.35‐μm SiGe BiCMOS high linearity Gilbert upconverters are demonstrated in this article by utilizing NMOS and PMOS transconductance amplifiers (TCAs), respectively. To improve the linearity of a Gilbert upconverter, the IF input TCA is replaced by a bias‐offset differential pair. A reactive LC current combiner is used as the load of the Gilbert mixer to double the output current. The upconverter with an NMOS TCA achieves the conversion gain of −4 dB, the OP1dB of −11 dBm, and the OIP3 of 5.5 dBm, whereas … Show more

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Cited by 5 publications
(2 citation statements)
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“…Conversely, to improve detection accuracy, a double‐sideband system has been proposed using the frequency tuning technique for eliminating the null detection point . In addition, a quadrature topology designed for a wireless communication system can also increase the detection accuracy . Although these architectures can improve accuracy, the requirement of two baseband signal‐processing paths for the baseband hardware of a quadrature system or more components for a double‐sideband system results in higher power consumption .…”
Section: Introductionmentioning
confidence: 99%
“…Conversely, to improve detection accuracy, a double‐sideband system has been proposed using the frequency tuning technique for eliminating the null detection point . In addition, a quadrature topology designed for a wireless communication system can also increase the detection accuracy . Although these architectures can improve accuracy, the requirement of two baseband signal‐processing paths for the baseband hardware of a quadrature system or more components for a double‐sideband system results in higher power consumption .…”
Section: Introductionmentioning
confidence: 99%
“…Some GaAs pHEMT active mixers e.g., distributed mixer [7, 8], or traveling‐wave mixer [9] have been reported to have wideband capability, high gain and good linearity, but their disadvantages are their large size and high power dissipation. The Gilbert‐cell mixer demonstrates better LO/RF isolation, due to efficient phase‐reversing that uses transistor switches and a high conversion gain, for high transistor performance, using SiGe‐base HBT [10, 11], BiCMOS [12] and CMOS [13, 14] technologies. The power dissipation and chip size are smaller than those for a distributed mixer.…”
Section: Introductionmentioning
confidence: 99%