Gigacount/second photon detection with InGaAs avalanche photodiodes

Patel, Kanak; Dynes, J. F.; Sharpe, A. W.; Zhong, Yuan; Penty, R.V.; Shields, A. J.

doi:10.1049/el.2011.3265

Cited by 35 publications

(29 citation statements)

References 15 publications

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“…5): as expected, afterpulsing is lower at higher temperature. By fitting the afterpulsing probability decay over the time delay after the original avalanche, we extracted three time constants (about 10, 20 and 320 μs at 225 K), which possibly Additionally, as demonstrated in literature [11], [17], [18], [19], when InGaAs/InP SPADs are employed with either GHz sinusoidal or sub-nanosecond gating, the avalanche charge is strongly reduced, thus afterpulsing lowers and a very high count rate can be reached.…”

Section: Afterpulsingmentioning

confidence: 69%

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Tosi

Calandri

Sanzaro

et al. 2014

IEEE J. Select. Topics Quantum Electron.

100

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We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μ mactive-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ∼ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature

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Section: Afterpulsingmentioning

confidence: 69%

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Tosi

Calandri

Sanzaro

et al. 2014

IEEE J. Select. Topics Quantum Electron.

100

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“…These results show that the free-running NFADs are ideal detectors for medium to long distance QKD experiments. For short to medium QKD, it would be better to use rapid gating detectors [10][11][12][13][14][15] , which can operate at even higher temperatures and deadtimes below 10 ns.…”

Section: Fig 3 (A) Shaded Region Shows the Theoretical Detector Temmentioning

confidence: 99%

Low noise InGaAs/InP single-photon negative feedback avalanche diodes: characterization and applications

Boso¹,

Korzh²,

Lunghi³

et al. 2015

SPIE Proceedings

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In recent years, many applications have been proposed that require detection of light signals in the near-infrared range with single-photon sensitivity and time resolution down to few hundreds of picoseconds. InGaAs/InP singlephoton avalanche diodes (SPADs) are a viable choice for these tasks thanks to their compactness and ease-of-use. Unfortunately, their performance is traditionally limited by high dark count rates (DCRs) and afterpulsing effects. However, a recent demonstration of negative feedback avalanche diodes (NFADs), operating in the free-running regime, achieved a DCR down to 1 cps at 10 % photon detection efficiency (PDE) at telecom wavelengths.Here we present our recent results on the characterization of NFAD detectors for temperatures down to approximately 150 K. A FPGA controlled test-bench facilitates the acquisition of all the parameters of interest like PDE, DCR, afterpulsing probability etc.We also demonstrate the performance of the detector in different applications: In particular, with low-temperature NFADs, we achieved high secret key rates with quantum key distribution over fiber links between 100-300 km. But low noise InGaAs/InP SPADs will certainly find applications in yet unexplored fields like photodynamic therapy, near infrared diffuse optical spectroscopy and many more. For example with a large area detector, we made timeresolved measurements of singlet-oxygen luminescence from a standard Rose Bengal dye in aqueous solution.

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“…In the research area of avalanche photon diodes, there has been remarkable progress in terms of higher speed and lower noise operations. In particular, avalanche photon diodes with background noise cancellation (BNC) schemes which include self-differencing and balanced APDs have been highlighted, because of their superior characteristics of GHz-speed operation and lower after-pulse noise [42][43][44][45][46][47]. It has been reported that QKD systems with self-differencing avalanche photon diodes can also be hacked [48].…”

Section: Introductionmentioning

confidence: 99%

Countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme

et al. 2016

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Gigacount/second photon detection with InGaAs avalanche photodiodes

Cited by 35 publications

References 15 publications

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Low noise InGaAs/InP single-photon negative feedback avalanche diodes: characterization and applications

Countermeasure against blinding attacks on low-noise detectors with a background-noise-cancellation scheme

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