Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Chen, Kewei; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

doi:10.1038/ncomms15217

Cited by 188 publications

(181 citation statements)

References 53 publications

(96 reference statements)

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“…Remarkably, the polarity of the TMR response changes from negative to positive sign 8 when the poling bias (VMAX) switches the FE polarization states of PZT from the up to the down state, consistent with previous literature report [23].…”

Section: B Tmr Characterization In Mftjs and Electrical Modulationsupporting

confidence: 91%

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Fang

Zhang

et al. 2019

Phys. Rev. Applied

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Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneling electroresistance and tunneling magnetoresistance, respectively. The nonvolatile ferroelectric control in the MFTJ can be attributed to separate contributions arising from two independent ferroelectric channels in the PZT interlayer with opposite polarization. Our study shows the dominant role of 'mixed' ferroelectric states on achieving accumulative electrical modulation of multilevel resistance states in MFTJs, paving the way for multifunctional device applications.

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Section: B Tmr Characterization In Mftjs and Electrical Modulationsupporting

confidence: 91%

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Fang

Zhang

et al. 2019

Phys. Rev. Applied

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“…Ferroelectric resistive switching effects have been observed in ferroelectric heterojunctions sandwiched by two metal or semiconductor electrodes [3–5]. Lots of interesting behaviors have been observed in ferroelectric/semiconductor heterojunctions.…”

Section: Introductionmentioning

confidence: 99%

“…Lots of interesting behaviors have been observed in ferroelectric/semiconductor heterojunctions. For example, a greatly enhanced tunneling electroresistance is observed in BaTiO 3 (BTO)/(001)Nb:SrTiO 3 (NSTO) [4, 5] and MoS 2 /BaTiO 3 /SrRuO 3 [6] heterojunctions since both the barrier height and width can be modulated by ferroelectric field effect. A coexistence of the bipolar resistive switching and negative differential resistance has been found in BaTiO 3 /(111)Nb:SrTiO 3 heterojunctions [7].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia

Yang

et al. 2018

Nanoscale Res Lett

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Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

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“…The tunneling resistance of a FTJ is modulated by electric field induced ferroelectric polarization switching-the effect known as tunneling electroresistance (TER). Following the theoretical predictions [9,10], there have been a number of successful experimental demonstrations of the TER effect in trilayer junctions [11][12][13][14][15][16], showing the potential of FTJs for nonvolatile memory applications [17,18]. The structural and/or electronic asymmetry of the FTJ plays a decisive role for the TER effect.…”

Section: Introductionmentioning

confidence: 99%

Resonant tunneling across a ferroelectric domain wall

Tao

Velev

et al. 2018

Phys. Rev. B

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Li, M.; Tao, L. L.; Velev, J. P.; and Tsymbal, Evgeny Y., "Resonant tunneling across a ferroelectric domain wall" (2018 Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with La 0.5 Sr 0.5 MnO 3 electrodes separated by a BaTiO 3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTiO 3 can be induced by polar interfaces. The resulting V-shaped electrostatic potential profile across the BaTiO 3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum-and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Cited by 188 publications

References 53 publications

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Nonvolatile Multilevel States in Multiferroic Tunnel Junctions

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Resonant tunneling across a ferroelectric domain wall

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