Giant responsivity of a new optically controlled graphene UV-phototransistor using graded band-gap ZnMgO gate

Kadri, A.; Ferhati, H.; Djeffal, F.

doi:10.1016/j.sna.2021.112701

Cited by 8 publications

(2 citation statements)

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“…Note that the light-induced photovoltage can behave better for a given wavelength and incident optical power by improving the crystal quality and/or applying surface treatments [ 17 ]. Other engineered materials [ 23 , 24 ] can also be employed as photosensing gates with some consideration to the band bending. Inspecting the same figure, we can see that the considered range of incident optical power can generate an exploitable amount of photovoltage especially if the nano-phototransistor is operated in the subthreshold regime, where the drain current is more sensitive to the variation of the effective gate voltage [ 42 ].…”

Section: Resultsmentioning

confidence: 99%

“…Recently, the light-induced photovoltage approach has made it possible to simply combine cutting-edge field-effect transistors, generally based on emerging 2D materials, with particular photosensing gates while forming advanced high-performance phototransistors [ 20 , 21 , 22 ]. In this context, some improvement approaches have been proposed to boost the modern carbon-based phototransistors such as, the use of an ultra-sensitive photogate producing improved photovoltage under specific illumination [ 23 , 24 ], exploiting the high-sensitivity of the GNR channel to the light-induced electrostatic modulation [ 22 ], and the identification of a photosensing regime, in which the phototransistors can provide better photosensing performance [ 10 ]. However, to the best of our knowledge, the role of the junctionless (JL) paradigm in improving the sub-10 nm CNT/GNR phototransistors and the performance comparison between ultrascaled CNT-based phototransistors and ultrascaled GNR-based phototransistors in junctionless mode and inversion mode (IM) are still questionable, which deserves experimental and computational investigation.…”

Section: Introductionmentioning

confidence: 99%

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Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

et al. 2022

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In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode space (MS) non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The adopted photosensing principle is based on the light-induced photovoltage, which alters the electrostatics of the carbon-based junctionless nano-phototransistors. The investigations included the photovoltage behavior, the I-V characteristics, the potential profile, the energy-position-resolved electron density, and the photosensitivity. In addition, the subthreshold swing–photosensitivity dependence as a function of change in carbon nanotube (graphene nanoribbon) diameter (width) was thoroughly analyzed while considering the electronic proprieties and the quantum physics in carbon nanotube/nanoribbon-based channels. As a result, the junctionless paradigm substantially boosted the photosensitivity and improved the scaling capability of both carbon phototransistors. Moreover, from the point of view of comparison, it was found that the junctionless graphene nanoribbon field-effect phototransistors exhibited higher photosensitivity and better scaling capability than the junctionless carbon nanotube field-effect phototransistors. The obtained results are promising for modern nano-optoelectronic devices, which are in dire need of high-performance ultra-miniature phototransistors.

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