Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

Chung, Sunjae; Lee, Sanghoon; Chung, Jaiho; Yoo, Taehee; Lee, Hakjoon; Kirby, Brian J.; Liu, X.; Furdyna, J. K.

doi:10.1103/physrevb.82.054420

Cited by 35 publications

(43 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This type of negative coercive field in magnetization reversal is often observed in ferromagnetic multilayer systems, in which the magnetic layers are coupled antiferromagnetically (AFM) with each other [24][25][26], as well as in submicron-width GaMnAs wires [27]. In case of multilayer systems, the magnetization of the layer can switch its direction when the external field becomes weaker than the AFM coupling field.…”

Section: Hall Effect Measurementsmentioning

confidence: 98%

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Lee

Yoo

et al. 2013

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Hall Effect Measurementsmentioning

confidence: 98%

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Lee

Yoo

et al. 2013

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…The retarded self-energies for the normal leads, L and R, and for the SC lead, are given in equations (15) and (16), in the main text. In the large gap limit ∆ → ∞, the modified BCS density of states ρ (ω) becomes in ρ (ω) = −i …”

Section: Acknowledgmentsmentioning

confidence: 99%

Fano–Andreev effect in a T-shape double quantum dot in the Kondo regime

Calle

Pacheco

Martins

et al. 2017

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

In the present work, we investigate the electronic transport through a T-shape double quantum dot system coupled to two normal leads and to one superconducting lead. We explore the interplay between Kondo and Andreev states due to proximity effects. We find that Kondo resonance is modified by the Andreev bound states, which manifest through Fano antiresonances in the local density of states of the embedded quantum dot and normal transmission. This means that there is a correlation between Andreev bound states and Fano resonances that is robust under the influence of high electronic correlation. We have also found that the dominant couplings at the quantum dots are characterized by a crossover region that defines the range where the Fano-Kondo and the Andreev-Kondo effect prevail in each quantum dot. Likewise, we find that the interaction between Kondo and Andreev bound states has a notable influence on the Andreev transport.

show abstract

“…For example, the oscillation behavior between FM and AFM IEC depending on the parameters of nonmagnetic spacer layer, which was expected in theoretical investigations [7]- [9], has yet to be observed even for the best known FM semiconductor multilayer systems, such as [GaMnAs/GaAs] n structures. So far, the long-range nature and the carrier density dependence are the only known characteristics of IEC for GaMnAs-based multilayer structures [10], [11]. Therefore, it is particularly important to investigate in more detail about the IEC properties of GaMnAs-based multilayer structures.…”

Section: Introductionmentioning

confidence: 99%

Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs:Be Multilayers

Lee

Choi

et al. 2015

IEEE Trans. Magn.

Self Cite

View full text Add to dashboard Cite

Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.Index Terms-Interlayer exchange coupling (IEC), magnetic multilayers, magnetoresistance (MR).

show abstract

Giant magnetoresistance and long-range antiferromagnetic interlayer exchange coupling in (Ga,Mn)As/GaAs:Be multilayers

Cited by 35 publications

References 37 publications

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Fano–Andreev effect in a T-shape double quantum dot in the Kondo regime

Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs:Be Multilayers

Contact Info

Product

Resources

About