Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Lee, Sangyeop; Lee, Hakjoon; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

doi:10.1016/j.jcrysgro.2012.12.063

Cited by 2 publications

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References 34 publications

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“…However, in the PHR data taken at 3 K, an abrupt transition occurs with a negative coercive field(i.e., the transition occurs even before the field direction reversal), as indicated by the dotted lines in the first two panels of the 1 st row of Fig. 4.This abnormal behavior observed in the PHR of the GaMnAs film was due to the transition of the vertical component of the magnetization [25,26]. In the PHR experiment, when the magnetic field was strong in the film plane, it directed the magnetization of the sample in the in-plane direction, including areas having out-of-plane easy axes.…”

Section: Resultsmentioning

confidence: 80%

Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

Lee

Choi

Bac

et al. 2016

Solid State Communications

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We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3-10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

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Section: Resultsmentioning

confidence: 80%