Abstract:We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magn… Show more
The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated.
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