2008
DOI: 10.1016/j.jmmm.2007.09.007
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Giant magnetic moments in dilute magnetic semiconductors

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Cited by 11 publications
(3 citation statements)
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“…Room temperature ferromagnetism in Co:TiO2 (anatase) has been observed by Matsumoto et al [3] and this opened up a new research activity in transition metal doped TiO2 and other oxides. Giant magnetic moments have been observed by Orlov et al [5] in dilute semiconductor titanium oxides thin film doped with Co and Fe. The origin of ferromagnetism in iron implanted rutile single crystals were also investigated by conversion electron Mössbauer spectroscopy (CEMS), zero-field-cooled (ZFC) and field cooled (FC) SQUID measurements [6].…”
Section: Introductionmentioning
confidence: 87%
“…Room temperature ferromagnetism in Co:TiO2 (anatase) has been observed by Matsumoto et al [3] and this opened up a new research activity in transition metal doped TiO2 and other oxides. Giant magnetic moments have been observed by Orlov et al [5] in dilute semiconductor titanium oxides thin film doped with Co and Fe. The origin of ferromagnetism in iron implanted rutile single crystals were also investigated by conversion electron Mössbauer spectroscopy (CEMS), zero-field-cooled (ZFC) and field cooled (FC) SQUID measurements [6].…”
Section: Introductionmentioning
confidence: 87%
“…A "Giant magnetic moments" of 22.9 Bohr magneton ( B) per impurity atom has been found for TiO2 doped with Co [11]. A high value of magnetic moment equal to 18.9 B per impurity atom was reported for Co doped ZnO films [12].…”
Section: Introductionmentioning
confidence: 93%
“…Tin oxide is an attractive material for solar cells and gas sensing applications due to its high optical transparency (above 80% in the visible range of the electromagnetic spectra) and electrical conductivity (carrier concentration of the order of 10 20 cm −3 ) [1][2][3][4]. Recently there is an increased interest to introduce magnetic functionality in tin oxide semiconductors due to their promising applications in spintronics [5][6][7][8][9][10][11][12][13][14]. The tin oxide semiconductor can be made ferromagnetic by doping with transition-metal (TM) ions.…”
Section: Introductionmentioning
confidence: 99%