Getters films at wafer level for wafer to wafer bonded MEMs

Moraja, Marco; Amiotti, M.

doi:10.1109/dtip.2003.1287065

Cited by 13 publications

(6 citation statements)

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“…The former is composed of an alloy or pure metal (e.g., BaAl 4 , Ti, Ni) in powder or bulk form, which is cyclically sublimated within the chamber, while the latter is deposited as a film of a few microns (<5 μm) in thickness and is often composed of transition metal alloys. − Flashed getters react with residual gases by sublimation (>1000 °C) and condensation on the inner walls of the vacuum chamber. ,, On the other hand, bulk getters are deposited prior to forming the vacuum cavity and are then thermally activated (<500 °C) to react with the surrounding contaminants. Getters are used in sublimation pumps, ion pumps, accelerators, and microelectromechanical system (MEMS) vacuum packaged devices. ,− …”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters

Abboud

Moutanabbir

2017

J. Phys. Chem. C

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The activation process and the gettering mechanisms of Zr−Corare earth metal alloy getters were investigated. The evolution of the surface composition prior to and upon exposure to volatile molecules (O 2 , N 2 , CO 2 ) was monitored in situ using X-ray photoelectron spectroscopy under annealing conditions compatible with low processing temperature regimes. The thermally activated process of surface oxygen diffusion into the bulk was elucidated and found to involve an activation energy of 0.21 ± 0.02 eV in the 200−350 °C temperature range. This activation process was also found to reversibly transform ZrO 2 into Zr(OH) 2 through the interaction with thermally desorbed hydrogen. Carbidic species form upon annealing at 250 °C via the interaction with an adventitious carbon layer on the surface, which results in the decrease in the number of surface sites available for subsequent gettering. In situ studies of the material reactivity with high purity O 2 , N 2 , and CO 2 were also investigated. O 2 was found to saturate the surface after single exposure, while CO 2 dissociates into CO and O − , where O − is incorporated deeper in the material and CO forms an ad-layer on the surface of the getter. N 2 was found to weakly interact with the partially activated surface and to form ZrN only upon annealing the sample to 350 °C indicating the poor reactivity of the material with N 2 at room temperature. The results display the importance of ridding systems of residual gases, especially N 2 , by properly degassing the system prior to sealing to minimize and/or eliminate trapped gases within devices during operation.

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Section: Introductionmentioning

confidence: 99%

Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters

Abboud

Moutanabbir

2017

J. Phys. Chem. C

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“…However, to realise very low cavity pressures (high vacuum), getter layers are necessary. 15 The most important aspects of the glass frit bonding, the thermal processing of the glass fit material is detailed shown in Fig. 4.…”

Section: Glass Frit Bonding For Hermetic Mems Sealingmentioning

confidence: 99%

Heat Conductivity Based Inner Cavity Pressure Monitoring and Hermeticity Monitoring for Glass Frit Wafer Bonded MEMS Devices

Knechtel

Dempwolf

Hering

2021

ECS J. Solid State Sci. Technol.

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Hermetic sealing is important regarding functionality and reliability for MEMS components. Typically this sealing is done at the wafer level using wafer bonding, which simultaneously provides mechanical protective caps. Here, a universally usable MEMS Foundry technology for inertial sensors and the glass frit bonding to seal them are introduced. A test structure for inner cavity pressure measurement, utilizing the pressure dependence of heat transfer in gasses, which can be realized in this MEMS technology, is introduced and described for use in detailed investigations of factors, which influence the inner cavity pressure in the wafer pre-processing and wafer bonding step itself. These investigations ultimately allowed optimized wafer processing, improved process control, and reliability investigation. We show how, based on the inner cavity pressure measurements, the glass frit bond process can be set up, that side effects such as storing times of the glass frit can be understood, how fine tuning of the bond process can be done, and how both process stability and device reliability can be efficiently be proven.

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“…This is caused by out-gassing of organic residuals from the glass into the sensor cavities. To realise lower cavity pressures, gettering layers are necessary [8]. Hermetic bonding of surface steps of up to a few micrometers (e.g.…”

Section: Fig 14: Principle Process Flow Of Glass Frit Bondingmentioning

confidence: 99%

Wafer Bonding Technologies in Industrial MEMS Processing - Potentials and Challenges

Knechtel¹

2006

ECS Trans.

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Getters films at wafer level for wafer to wafer bonded MEMs

Cited by 13 publications

References 1 publication

Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters

Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters

Heat Conductivity Based Inner Cavity Pressure Monitoring and Hermeticity Monitoring for Glass Frit Wafer Bonded MEMS Devices

Wafer Bonding Technologies in Industrial MEMS Processing - Potentials and Challenges

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