Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on silicon

Buck, T.M.; Pickar, K.A.; Poate, J. M.; Hsieh, C. M.

doi:10.1063/1.1654228

Cited by 85 publications

(18 citation statements)

References 8 publications

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“…113,114 Impurities such as Fe, Co, Ni, Cu, and Au were shown to be gettered by a variety of implanted species. More recently, channeled and high energy Si self-implantation has been examined in more detail for its gettering properties.…”

Section: Implantation Damagementioning

confidence: 99%

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Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges.

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Section: Implantation Damagementioning

confidence: 99%

“…113,114 Although various groups have explored implantation as an extrinsic gettering technique, 113-119 such studies have not been exhaustive. In light of current processing trends, several inherent advantages of ion implantation have led to interest in re-examining this approach.…”

Section: Impurity Getteringmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

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show abstract

“…2 PTEM was therefore conducted to determine whether the microstructural differences were, in part, responsible for the differences in sheet resistance observed. Figure 4 indicates the PTEM images of the extended defects in the flash annealed control samples.…”

Section: Resultsmentioning

confidence: 99%

Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

Camillo-Castillo

Law

Jones

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Since the first publication in the field of ion beam gettering in 1972 [9] and the first application in 1973 [2] the new gettering method has developed into an effective technological procedure. The advantages of the ion beato gette~ing compared to other methods are (i) the high reproducibility of the damage conditions by the precise adjustment of dose, energy, temperature, and ion species; (ii) the application of ions which become electrically inactive atoms inside the crystal; (Jii) the high-vacuum conditions of the process; (ir) damage production through planar layers; (v) gettering by the implanted ions themselves, and (vi) lower annealing temperatures in comparison with glass gettering.…”

Section: Ion Beam Getteringmentioning

confidence: 99%