Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

Camillo-Castillo, Renata; Law, Me; Jones, K.; Lindsay, Richard; Maex, Karen; Pawlak, B. J.; McCoy, S.

doi:10.1116/1.2140003

Cited by 8 publications

(4 citation statements)

References 14 publications

(13 reference statements)

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“…Flash lamp annealing (FLA) is a promising candidate for ultra shallow junction (USJ) formation of future scaled CMOS fabrication because of its diffusion-less and high dopant-activation features [1][2][3][4]. To date, there have been many reports on FLA.…”

Section: Introductionmentioning

confidence: 99%

Dopant Activation Phenomenon by Flash Lamp Annealing

Nara,

Kato,

Aoyama

et al. 2008

Meet. Abstr.

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Section: Introductionmentioning

confidence: 99%

Dopant Activation Phenomenon by Flash Lamp Annealing

Nara,

Kato,

Aoyama

et al. 2008

Meet. Abstr.

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“…The demand for USJ formation with high dopant activation and high profile abruptness has been increasing greatly with the scaling of CMOSFETs. Various kinds of annealing methods including millisecond annealing have been proposed and demonstrated to achieve the high dopant activation and high profile abruptness [1][2][3][4][5][6][7][8]. FLA is a promising candidate for annealing techniques of the future because of its diffusion-less and high-dopant-activation features [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Various kinds of annealing methods including millisecond annealing have been proposed and demonstrated to achieve the high dopant activation and high profile abruptness [1][2][3][4][5][6][7][8]. FLA is a promising candidate for annealing techniques of the future because of its diffusion-less and high-dopant-activation features [4][5][6][7][8]. To date, there have been many reports on FLA, and many aspects of USJs formed by FLA have been presented.…”

Section: Introductionmentioning

confidence: 99%

Dopant Activation Phenomenon by Flash Lamp Annealing

et al. 2008

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“…Recently, there has been intense interest in advanced annealing schemes, such as flash and laser annealing. 4,5 These techniques promise high meta-stable dopant activation and marginal TED. However, it has been reported that due to the nature of the ultrashort times, the thermal budget is not able to remove the extended defects, which are deleterious to the device.…”

mentioning

confidence: 99%

Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

Yeong¹,

Colombeau²,

Mok³

et al. 2008

J. Electrochem. Soc.

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The formation of highly activated ultrashallow junctions is one of the main challenges for the forthcoming generation of complementary metal oxide semiconductor (CMOS) devices. Co-implantation of impurities such as carbon (C) or fluorine (F) is an attractive technique. However, junction optimization can only be achieved with a complete understanding of the underlying physical mechanisms. In this paper, the effect of C∕F co-implant on boron (B)-doped preamorphized silicon during the soak annealing is extensively studied. C∕F atoms are located in the middle range between the B∕BF2 concentration profiles and the end-of-range (EOR) defect band, with the aim of reducing the interactions of dopants with the interstitials released from EOR region. Isochronal annealing study is performed to investigate the impact of C∕F codoping on the dopant de/reactivation behavior. It is shown that transient enhanced diffusion can be reduced by both co-implant schemes. The B-doped junction formed with the C co-implant is relatively stable and dopant deactivation is inhibited, while it is presumed that F atoms form B–F complexes, which reduces the B activation level. A physical insight on the dopant-defect interactions associated with C∕F co-implant is established through the combination of diffusion and activation studies during soak annealing.

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Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

Abstract: Articles you may be interested in P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation J.

Cited by 8 publications

References 14 publications

Dopant Activation Phenomenon by Flash Lamp Annealing

Dopant Activation Phenomenon by Flash Lamp Annealing

Dopant Activation Phenomenon by Flash Lamp Annealing

Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

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