Dopant Activation Phenomenon by Flash Lamp Annealing

Abstract

We studied the characteristics of ultra-shallow junctions (USJ) formed by flash lamp annealing (FLA) to reveal the nature of the dopant activation. We found that FLA is a form of solid phase epitaxial regrowth(SPER), employing high temperatures and short (mili-second) times. This achieves higher dopant activation than obtained in SPER.