Geometry Optimization of Planar Hall Devices Under Voltage Biasing

Zhang, Guo; Zhang, Jinyu; Li, Zhan; Wu, Peng; Wu, Huaqiang; He, Qian; Wang, Yan; Zhang, Zhiyong; Yu, Zhiping

doi:10.1109/ted.2014.2361686

Cited by 11 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Let us introduce the Lagrange multiplayers λ J and λ n corresponding to the constraints [Eq. (7)] so that the functional to be minimized reads now,…”

Section: Least-dissipation Principlementioning

confidence: 99%

“…In contrast to usual non-equilibrium stationary sates, the presence of the static magnetic field leads to specific transverse boundary conditionsthe charge accumulation at the edges-that are not imposed directly by external constraints but by the system itself, according to the Le Chatelier-Braun principle. 2,3 This specificity of the boundary conditions for the Hall effect has been discussed within a large variety of theoretical models, [4][5][6][7][8][9][10][11][12] but the nature of the charge accumulation at the edges still remains rather mysterious. Indeed, the discovery of the extraordinary Hall effect at the turn of the millennium [13][14][15] and the recent developments about the Hall effect in ferromagnets 16,17 or about the spin-Hall effect 18,19 show that 140 years after his discovery, the classical Hall effect still deserves attention.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface currents in Hall devices

Creff

Faisant

Rubı́

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

One hundred and forty years after his discovery, the Hall effect still deserves attention. If it is well-known that the Hall voltage measured in Hall bar devices is due to the electric charges accumulated at the edges in response to the magnetic field, the nature of the corresponding boundary conditions is still problematic. In order to study this out-of-equilibrium stationary state, the Onsager's least-dissipation principle is applied. It is shown that, beside the well-known expression of the charge accumulation and the corresponding Hall voltage, a longitudinal surface current proportional to the charge accumulation is generated. An expression of the surface current is given. The surface currents allow the Hall voltage to be stabilized at a stationary state, despite, e.g., the presence of leakage of charges at the edges.

show abstract

“…Let us introduce the Lagrange multiplayers λ J and λ n corresponding to the constraints [Eq. (7)] so that the functional to be minimized reads now,…”

Section: Least-dissipation Principlementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface currents in Hall devices

Creff

Faisant

Rubı́

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…For planar HHDs with twofold symmetry, a high GV can approach the theoretical limit of 0.74 [21]. However, For VHDs with lower symmetry and additional degrees of freedom, the GV value is significantly reduced compared to that of the HHDs due to the value of the input resistance [22].…”

Section: Device Design and Tcad Simulationmentioning

confidence: 96%

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Huang

2021

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

This paper proposes a new implementation method to significantly improve the magnetic sensitivity of a fully symmetric vertical Hall device (FSVHD) based on low-voltage CMOS technology. The FSVHD consists of four identical threecontact vertical Hall elements (3CVHE) and each 3CVHE is located in a low-doped deep n-well. The terminals of the 3CVHE are n + implanted in an n-well and a p + implantation in a p-well is performed to act as a trench between two adjacent n + contacts, enabling Hall current flowing deeply for sensitivity improvement. The influence of the geometry sizes on magnetic sensitivity is exploited utilizing TCAD simulation to obtain the optimized device structure in a 0.18 μm CMOS standard technology. The experimental results reveal that the proposed FSVHD with a p + /pwell trench can attain an improved voltage-related sensitivity of 8.4 mV/VT, which is about 70% higher than that of a conventional FSVHD without a trench in the same CMOS fabrication process, while offset and noise are not degraded. The proposed p + /p-well implantation trench is a good solution to enhance the sensitivity of a low-voltage CMOS VHD with a low manufacturing cost.

show abstract

“…However, a description that takes into account the non-equilibrium nature of the electric screening occurring in the SHE is still an open problem. One of the main difficulty is the same as for the classical Hall-effect [17][18][19][20][21][22][23][24][25][26]: it is due to the fact that the values of the charge accumulation at the edges of the Hall bar are not directly imposed by the external constraints. Instead, for the stationary state, the accumulation of electric charges and spins at the edges is generated by the system itself, in reaction to the action of the internal magnetic field (the spin-orbit effective magnetic field), together with to stationary current injected from the electric generator, and for a given geometry.…”

Section: Introductionmentioning

confidence: 99%

Screening effect in Spin-Hall Devices

Creff,

Olive,

Wegrowe

2021

Preprint

View full text Add to dashboard Cite

The stationary state of the spin-Hall bar is studied in the framework of a variational approach that includes non-equilibrium screening effects. The minimization of the power dissipated in the system is performed with taking into account the spin-flip relaxation and the global constrains due to the electric generator and global charge conservation. The calculation is performed in both approximations of negligible spin-flip scattering and strong spin-flip scattering. In both cases, the expressions of the spin-accumulation and the longitudinal and transverse pure spin-currents are derived analytically. Due to the small value of the Debye-Fermi screening length, the spinaccumulation is shown to be linear in y (across the device), linear in the electric field imposed by the generator, and inversely proportional to the temperature for non-degenerate conductors.

show abstract

Geometry Optimization of Planar Hall Devices Under Voltage Biasing

Cited by 11 publications

References 30 publications

Surface currents in Hall devices

Surface currents in Hall devices

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Screening effect in Spin-Hall Devices

Contact Info

Product

Resources

About