Geometry optimization for planar piezoresistive stress sensors based on the pseudo-Hall effect

Doelle, M.; Mager, Dario; Ruther, Patrick; Oliver, Paul

doi:10.1016/j.sna.2005.08.014

Cited by 38 publications

(22 citation statements)

References 16 publications

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“…Cross-sensitivities to magnetic signals and thermal gradients can be effectively suppressed or extracted separately, if desired [67,68]. Numerical sensitivity and optimization studies have relied on conformal mapping and solving the Laplace equation [71]. The devices have absolute sensitivities up to 310 µV/V/MPa, depending on the polarity of the carriers being used and the stress component being measured.…”

Section: Pseudo-hall Effect Devicesmentioning

confidence: 99%

Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

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This paper presents the progress in silicon-based biomedical microstructures, material characterization techniques, and mechanical microsystems by the authors' research team. Microneedle and microelectrode arrays with fluidic through-wafer vias and electrical contacts were developed. The structures are designed for dermatological and biological applications such as allergy testing, surface electromyography, and spatially resolved impedance spectroscopy. The characterization of thin films has relied on the bulge test. By the formulation of more powerful models, the application range of the bulge test was extended to elastically supported thin-film multilayers. This enables the mechanical properties of thin films to be determined reliably. Finally, progress in the operation and application of novel stress sensors based on CMOS diffusions and field effect transistors and exploiting the pseudo-Hall effect is reported. Their integration into powerful single-chip microsystems is described. Applications include stress mapping, force and torque measurements, and tactile surface probing of microcomponents. 

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Section: Pseudo-hall Effect Devicesmentioning

confidence: 99%

Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

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“…Rather than taking it a reliability issue, this effect called pseudo-Hall effect can be useful for designing micro-mechanical sensors [1][2][3][4]. Compared to the two terminal diffused resistors, the pseudo-Hall effect offers many advantages which includes the elimination of Wheatstone bridge from the measuring circuitry, thermal stability and the small device size [5][6][7][8]. After reporting of this effect a number of studies were carried out on Si based devices and it has been shown that this effect can be used for stress, strain, pressure and force sensing in micro-electromechanical systems (MEMS) devices [9,10].…”

Section: Introductionmentioning

confidence: 99%

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

et al. 2018

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The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors.

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“…In four-contact devices two opposite contacts act as conventional source and drain diffusions whereas the stress dependent voltage Vout, in this case also termed pseudo-Hall voltage, is measured between the two remaining contact diffusions. It has been shown that a nonconducting area in the center of the gate leads to an increased sensitivity [14].…”

Section: Introductionmentioning

confidence: 99%

Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

et al. 2015

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This paper presents a novel method to operate Wheatstone bridges of piezoresistive field effect transistors (FETs) as stress sensors. Such structures consist of a square arrangement of four FETs connected by the source/drain diffusion in each corner. When the FETs are on and the bridge is operated with an input voltage between a pair of opposite contacts, the bridge output voltage appearing between the perpendicular contact pair is proportional to the difference of in-plane normal stress components. In the new method the resistivity of one of the four FETs is individually tuned by varying its gate voltage by ΔV from the common gate voltage of the other three gates, in order to rebalance the bridge. We find that the corresponding sensitivity normalized to the input voltage reaches 4.5 mV/(V MPa). It is thus a factor of about 10 higher than the conventional sensitivity based on the bridge output voltage, which reaches 490 μV/(V MPa).

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Geometry optimization for planar piezoresistive stress sensors based on the pseudo-Hall effect

Cited by 38 publications

References 16 publications

Advanced silicon microstructures, sensors, and systems

Advanced silicon microstructures, sensors, and systems

A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

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