A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications

Abstract

The pseudo-Hall effect in n-type single crystal 3C-SiC(1 0 0) with low carrier concentration has been investigated. Low pressure chemical vapor deposition was used to grow the single crystal n-type 3C-SiC(1 0 0) and Hall devices were fabricated by photolithography and dry etch processes. A large pseudo-Hall effect was observed in the grown thin films which showed a strong dependence on the crystallographic orientation. N-type 3C-SiC(1 0 0) with low carrier concentration shows a completely different behavior of pseudo-Hall measurements as compared to the p-type 3C-SiC(1 0 0). Contrary to p-type, the effect is maximum along [1 0 0] crystallographic orientation and minimum along [1 1 0] orientation. Moreover, the observed pseudo-Hall effect is 50% larger than p-type with higher carrier concentration grown by the same process which makes n-type 3C-SiC(1 0 0) with low carrier concentration more suitable material for designing highly sensitive micro-mechanical sensors.

Highly sensitive p-type 4H-SiC van der Pauw sensor

“…This technique has been conrmed as a simple but effective way for the characterizations of strain induced effect in semiconductor materials. 7,11,[16][17][18][19][20][21][22]25,26 The conguration of the sensor operation under induced stress/strain is illustrated in Fig. 2(b).…”

“…There are numerous studies on the 3C-SiC based four-terminal strain sensor with a relatively high sensitivity and good reproducibility. [15][16][17][18][19][20][21] However, the strain induced effect and strain sensing in four-terminal 4H-SiC have not been investigated. Yet, the development of SiC devices and electronics is shiing towards 4H-SiC and 6H-SiC, which are widely available.…”

Development and Application of Resistance Strain Force Sensors

“…The optimal crystal orientations or the doping concentrations in materials have been of great interest for improving their piezoresistive sensitivity [ 70 , 76 ]. For example, the gauge factor of single crystalline 3C-SiC is 5.0 and 30.3 in the [100] and [110] orientation, respectively [ 77 , 78 ]. For a GaN-based electromechanical devices, the time-dependent piezoresponse is much larger than that of other semiconductors because of the large piezoelectric contribution to the overall piezoresponse response.…”

Giant piezoresistive effect by optoelectronic coupling in a heterojunction

“…The GF of single crystalline p-type cubic silicon carbide (3C-SiC) is 5.0 and 30.3 in the [100] and [110] orientation, respectively 8 . A significant improvement in piezoresistive sensitivity has also been demonstrated using optimal-doping concentrations 6,9 . In terms of material choice, metal strain gauges have been commercialized and are widely employed in industry, research and daily life.…”