Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

doi:10.1109/jeds.2020.3025336

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…In support of this, recent STT-MTJ LiM cells based crypto circuits exhibited increased energy consumption [26]. In the recent past, emerging tunnel FET (TFET) with its band-to-band tunnelling mechanism exhibited steep-slope characteristics (lower subthreshold swing) and higher ON to OFF current ratio (I ON /I OFF ) [27][28][29]. As a result, TFET based digital, analog and mixed signal circuits/systems achieved higher energy efficiency at lower supply voltages [30][31].…”

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confidence: 89%

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Emerging tunnel FET and spintronics-based hardware-secure circuit design with ultra-low energy consumption

Japa

Sahoo²,

Vaddi³

et al. 2022

J Comput Electron

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Present CMOS technology with scaled channel lengths exhibited higher energy consumption in designing secure electronic circuits against hardware vulnerabilities and breaches. Specifically, CMOS sense amplifier based secure differential power analysis (DPA) countermeasures at scaled channel lengths show large energy consumption with increased vulnerability. Additionally, spin transfer torque magnetic tunnel junction (STT-MTJ) and CMOS based logic-in-memory (LiM) cells demonstrate high energy consumption due to the large write current requirement of STT-MTJ and poor MOS device performance at scaled channel lengths. This paper for the first time leverages emerging tunnel FET (TFET) steep-slope device characteristics and compatible non-volatile STT-MTJ devices for enhanced hardware security with ultra-low energy consumption at lower supply voltages. TFET based sense amplifier based logic (SABL) gates have been proposed that achieve 3× lower energy consumption compared to Si FinFET SABL designs. Further, utilizing TFET SABL gates, TFET Pride S-box is designed that exhibits higher DPA resilience with 3.2× lower energy consumption compared to FinFET designs. With resulted lower static power consumption, TFET SABL based crypto systems can show lower vulnerability to static power side-channel attacks. Besides, proposed STT-MTJ and TFET LiM gates achieves 4× lower energy consumption compared to STT-MTJ and FinFET designs. Moreover, these gates have been explored in logic encryption/locking technique that shows 3.1× lower energy consumption compared to STT-MTJ and FinFET based design. KeywordsTunnel FET (TFET) • Differential power analysis (DPA) • Sense amplifier based logic (SABL) • Spin transfer torque magnetic tunnel junction (STT-MTJ) • Logic-in-memory (LiM) • Logic encryption/locking

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mentioning

confidence: 89%

“…TFET device works based on band-to-band tunnelling mechanism and exhibits high ON to OFF current ratio. Several TFET devices experimentally demonstrated lower subthreshold swing i.e., below 60mV/dec [28][29]. This work explores LUT based 20nm InAs TFET Verilog-A models for circuit design [39].…”

Section: Tfet Technologymentioning

confidence: 99%

Emerging tunnel FET and spintronics-based hardware-secure circuit design with ultra-low energy consumption

Japa

Sahoo²,

Vaddi³

et al. 2022

J Comput Electron

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Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model

Bashir,

Zahoor,

Alzahrani

2024

Silicon

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Electrochemical characterization of ZnO-based transparent materials as recording electrodes for neural probes in optogenetics

Miwa

Kino

Fukushima

et al. 2022

Journal of Vacuum Science &Amp; Technology B

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In the elucidation of brain functions, neuroscience has garnered attention in the realization of brain-machine interfaces, deep brain stimulation, and artificial intelligence. Optogenetics is a biological technique used to control neural activities via optical stimulation. It is one of the most effective approaches used to investigate brain functions. This study proposed to employ the transparent recording electrode to enhance the performance of neural probes for optogenetics. Compared with conventional metal recording electrodes, the proposed transparent recording electrodes have the potential to obtain higher signal-to-noise ratios when placed over optical stimulation points. To develop transparent recording electrodes, we used ZnO-based materials with good biocompatibility and transparency for utilization as biomedical electrodes. Considering saline as one of the main components of living organisms, we investigated the fundamental electrochemical characteristics of ZnO-based electrodes in saline through electrochemical impedance spectroscopy and cyclic voltammetry. The results showed that nondoped ZnO and Al-doped ZnO, deposited by radio frequency magnetron sputtering, exhibited a broad potential window. An electrical double layer was found to strongly act on the interface between the electrodes and solution rather than a redox reaction. In addition, this study reports the effects of crystallization and dopant on the electrochemical characteristics of the ZnO-based electrodes. The transparent ZnO-based electrode developed herein is a promising candidate to enhance the performance of neural probes for optogenetics and can be effectively applied in biological devices.

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Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

Cited by 4 publications

References 26 publications

Emerging tunnel FET and spintronics-based hardware-secure circuit design with ultra-low energy consumption

Emerging tunnel FET and spintronics-based hardware-secure circuit design with ultra-low energy consumption

Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model

Electrochemical characterization of ZnO-based transparent materials as recording electrodes for neural probes in optogenetics

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