2005
DOI: 10.1063/1.2103389
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Generation of single color centers by focused nitrogen implantation

Abstract: Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the nitrogen-vacancy colour center.An analysis of the nitrogen flux together with a determination of the number of nitrogenvacancy centers yields that on average two 2 MeV nitrogen atoms need to be implanted per defect center. However, a much lower flux has been chosen such that… Show more

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Cited by 244 publications
(221 citation statements)
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“…The relatively high fluorescence rates are a consequence of optical waveguiding by the diamond pillar structure 35 , where fluorescence saturation is typically observed at incident green powers of about 1 mW. Two-photon autocorrelation measurements verified which pillars host single NV centers 36 . The diamond cantilevers are glued to a pulled glass fiber using a micromanipulator, which is then attached to a quartz tuning fork for force sensing.…”
Section: Probe Design and Fabricationmentioning
confidence: 93%
“…The relatively high fluorescence rates are a consequence of optical waveguiding by the diamond pillar structure 35 , where fluorescence saturation is typically observed at incident green powers of about 1 mW. Two-photon autocorrelation measurements verified which pillars host single NV centers 36 . The diamond cantilevers are glued to a pulled glass fiber using a micromanipulator, which is then attached to a quartz tuning fork for force sensing.…”
Section: Probe Design and Fabricationmentioning
confidence: 93%
“…This latter method may provide greater spatial control of the implantation process, which will benefit controlled fabrication of arrays of single NV -3 centers, and the low N-content of the starting material is essential for long coherence times of the spin states of the NV -center. 7 Meijer et al 9 The purpose of this work is to confirm and differentiate Method A from Method B, and ultimately provide a technique for measuring the yield of NV -formation.…”
mentioning
confidence: 99%
“…Sensitive electric-field detection is based on the remarkable properties of the NV centre 10 . The most notable of these are: the detection of fluorescence from single defects to provide an atom-sized local probe 11 , outstandingly long spin dephasing times 12 , as well as the controlled positioning of single centres 13,14 . These properties have led to a variety of applications of the NV centre, ranging from quantum science 15 and precision magnetic-field sensing [16][17][18][19][20][21][22][23][24] to biolabelling 25,26 .…”
mentioning
confidence: 99%