Generalization of shot definition for variable shaped e-beam machines for write time reduction

Sahouria, Emile; Bowhill, Amanda

doi:10.1117/12.867994

Cited by 10 publications

(7 citation statements)

References 9 publications

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“…A third stepmetrology data preparation is not reviewed here. [4] SMO Table 3: Assessment of the trade-off between shout count and mask EPE for various global solution approaches. [8] Figure 11: Shot count reduction example for different global optimization solutions [7] Figure 12: EPE and process window measurements for different global optimization solutions.…”

Section: Discussionmentioning

confidence: 99%

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Mask write time reduction: deployment of advanced approaches and their impact on established work models

et al. 2012

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The extension of 193nm exposure wavelength to smaller nodes continues the trend of increased data complexity and subsequently longer mask writing times. In particular inverse lithography methods create complex mask shapes. We introduce a variety of techniques to mitigate the impact -data simplification post-optical proximity correction (OPC), LShots, multi-resolution writing (MRW) and optimization based fracture. Their potential for shot count reduction is assessed. All of these techniques require changes to the mask making work flow at some level -the data preparation and verification flow, the mask writing equipment, the mask inspection and the mask qualification in the wafer manufacturing line. The paper will discuss these factors and conduct a benefit -effort assessment for the deployment. Some of the techniques do not reproduce the originally targeted mask shape. The impact of the deviations will be studied at wafer level with simulations of the exposure process and quantified as to their impact on the exposure process window. Based on the results of the assessment a deployment strategy will be discussed.

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Section: Discussionmentioning

confidence: 99%

“…[4] Current e-beam mask writing tools allow triangles or rectangles. The concept of L-shot fracture is to increase the capability of the write tools so that a single shot in the shape of an "L" can be exposed.…”

Section: L-shotmentioning

confidence: 99%

Mask write time reduction: deployment of advanced approaches and their impact on established work models

et al. 2012

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“…Ma et al [94] present a heuristic algorithm for rectangle fracturing and sliver reduction. Compared to rectangle fracturing, the L-shape fracturing is an effective way to further reduce the number of shots [95][96][97]. For the L-shape fracturing strategy as illustrated in Figure 11(b), an additional shaping aperture is employed to form the L-shape shots.…”

Section: Ebl Layout Fracturingmentioning

confidence: 99%

“…Ref. [95] reports the L-shape fracturing can reduce about 38% shots without providing any algorithm details. Refs.…”

Section: Ebl Layout Fracturingmentioning

confidence: 99%

Design for manufacturability and reliability in extreme-scaling VLSI

Roy

et al. 2016

Sci. China Inf. Sci.

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In the last five decades, the number of transistors on a chip has increased exponentially in accordance with the Moore's law, and the semiconductor industry has followed this law as long-term planning and targeting for research and development. However, as the transistor feature size is further shrunk to sub-14nm nanometer regime, modern integrated circuit (IC) designs are challenged by exacerbated manufacturability and reliability issues. To overcome these grand challenges, full-chip modeling and physical design tools are imperative to achieve high manufacturability and reliability. In this paper, we will discuss some key process technology and VLSI design co-optimization issues in nanometer VLSI.

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“…However there is a trade-off between complexity of optimized mask, mask write time & lithographic performance [1] . Several shot count reduction techniques for SMO & ILT Manhattanized masks have been introduced, such as Mask Grid Approximation, Jog smoothing [2] , L-shaped-beam shot [3] and overlapping shot from Model Based Mask Data Preparation (MB-MDP) [4] to address the appropriate amount of trade-off.…”

Section: Introductionmentioning

confidence: 99%

Optimization of mask shot count using MB-MDP and lithography simulation

et al. 2011

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In order to maintain manageable process windows, mask shapes at the 20nm technology node and below become so complex that mask write times reach 40 hours or might not be writeable at all since the extrapolated write time reaches 80 hours. The recently introduced Model Based Mask Data Preparation (MB-MDP) technique is able to reduce shot count and therefore mask write time by using overlapping shots. Depending on the amount of shot count reduction the contour of the mask shapes is changed leading to the question how the mask contour influences wafer performance.This paper investigates the tradeoff between mask shot count reduction using MB-MDP and wafer performance using lithography simulation. A typical Source-Mask-Optimization (SMO) result for a 20nm technology will be used as an example.

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Generalization of shot definition for variable shaped e-beam machines for write time reduction

Cited by 10 publications

References 9 publications

Mask write time reduction: deployment of advanced approaches and their impact on established work models

Mask write time reduction: deployment of advanced approaches and their impact on established work models

Design for manufacturability and reliability in extreme-scaling VLSI

Optimization of mask shot count using MB-MDP and lithography simulation

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