In order to maintain manageable process windows, mask shapes at the 20nm technology node and below become so complex that mask write times reach 40 hours or might not be writeable at all since the extrapolated write time reaches 80 hours. The recently introduced Model Based Mask Data Preparation (MB-MDP) technique is able to reduce shot count and therefore mask write time by using overlapping shots. Depending on the amount of shot count reduction the contour of the mask shapes is changed leading to the question how the mask contour influences wafer performance.This paper investigates the tradeoff between mask shot count reduction using MB-MDP and wafer performance using lithography simulation. A typical Source-Mask-Optimization (SMO) result for a 20nm technology will be used as an example.
To evaluate the uncertainty caused by mismatch using Equivalent Capacitance Substitution Method (ECSM) with a T-network of matching resistors for monopole antenna calibration poses a problem. This paper derives the mathematical model of the mismatch factor through network analysis. The model can be used to evaluate the uncertainty component caused by mismatch or to calculate the mismatch correction factor using ECSM with a T-network for monopole antenna calibration. A case study on the application of the model to actual measurements is also included.
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