Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Schroeder, Thomas; Giussani, A.; Muessig, H.J.; Weidner, G.; Costina, I.; Wenger, Christian; Lukosius, M.; Storck, P.; Zaumseil, P.

doi:10.1016/j.mee.2009.03.108

Cited by 13 publications

(6 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The remarkable crystallographic as well as electronic flexibility render praseodymia highly interesting for microelectronic 4 as well as surface chemical applications, such as sensors 5 or catalysis. 6 An optimization of the properties and a targeted use of such multivalent oxides requires an in-depth understanding of the electronic structure.…”

Section: Introductionmentioning

confidence: 99%

Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment

Schaëfer

Gevers

Zielasek

et al. 2011

The Journal of Chemical Physics

Self Cite

View full text Add to dashboard Cite

A cold radio frequency oxygen plasma treatment is demonstrated as a successful route to prepare clean, well-ordered, and stoichiometric PrO 2 layers on silicon. High structural quality of these layers is shown by x-ray diffraction. So far unobserved spectral characteristics in Pr 3d x-ray photoelectron (XP) spectra of PrO 2 are presented as a fingerprint for praseodymia in its highest oxidized state. They provide insight in the electronic ground state and the special role of praseodymia among the rare earth oxides. They also reveal that former XP studies suffered from a significant reduction at the surface.

show abstract

Section: Introductionmentioning

confidence: 99%

Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment

Schaëfer

Gevers

Zielasek

et al. 2011

The Journal of Chemical Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…26 To achieve the overgrowth of single crystalline Ge͑111͒ layers free of stacking twins on the Pr-oxide support, it is necessary to induce a phase transition in the asdeposited hexagonal ͑hex͒ Pr 2 O 3 ͑0001͒ films toward a cubic ͑cub͒ PrO 2 ͑111͒ film structure. 27 This hexagonal to cubic phase transition of the heteroepitaxial Pr-oxide layer on Si͑111͒ is carried out in 1 bar oxygen at temperatures of 300-600°C.…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Seifarth

Walczyk

Łupina

et al. 2009

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Single crystalline PrO 2 ͑111͒ / Si͑111͒ heterostructures are flexible buffers for global Ge integration on Si. A combined materials science-electrical characterization is carried out to study the influence of postdeposition annealing in 1 bar oxygen at 300-600°C on the dielectric properties of PrO 2 ͑111͒ / Si͑111͒. The materials science transmission electron microscopy and x-ray reflectometry studies reveal that postdeposition oxidation of the PrO 2 ͑111͒ / Si͑111͒ boundary results in an amorphous interface ͑IF͒ layer, which grows in thickness with temperature. Nondestructive depth profiling synchrotron radiation-based x-ray photoelectron spectroscopy and x-ray absorption spectroscopy methods demonstrate that this amorphous IF layer is composed of two Pr-silicate phases, namely, with increasing distance from Si, a SiO 2 -rich and a SiO 2 -poor Pr silicate. The electronic band offset diagram shows that the wide band gap dielectric Pr silicate results in higher band offsets with respect to Si than the medium band gap dielectric PrO 2 . The electrical characterization studies by C-V measurements show that ͑a͒ well-behaved dielectric properties of the PrO 2 ͑111͒ / IF/ Si͑111͒ are achieved in a narrow postdeposition oxidation window of 400-450°C and that ͑b͒ defects are distributed over the Pr-silicate IF layer. Temperature-dependent J-V studies report furthermore that the formation of the single crystalline PrO 2 /amorphous Pr-silicate bilayer structure on Si͑111͒ results in ͑a͒ improved insulating properties and ͑b͒ strong electrical instability phenomena in the form of a Maxwell-Wagner instability and dielectric relaxation.

show abstract

“…Methods such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) can also be used in place of the ionimplantation method. The specific method used may depend on factors such as the desired material properties, the complexity of the device architecture, and the available equipment in the fabrication facility [40,43]. Tables 1 and 2 show the structural parameters and physical models utilized in the simulation of GSI-NWM, respectively.…”

Section: Device Structure and Software Specificationsmentioning

confidence: 99%

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

et al. 2023

View full text Add to dashboard Cite

This paper critically investigates the effect of doping on different device characteristics of a Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The doping of source, channel, and drain has a prominent effect on important device characteristics, which has been investigated through DC and AC analysis performed on the SILVACO TCAD simulator. A numerical computational-based simulation study has been used to investigate the modulation of various device characteristics, such as threshold voltage, cut-off frequency, subthreshold swing, MTPG, current ratio, channel resistance, and transconductance. The investigation revealed a strong dependence of most of these characteristics on the source, channel, and drain doping levels, providing valuable insights into device performance. Proper optimization in doping can significantly improve the performance of the device. A compact physics-based analytical model has been mathematically evaluated and proposed in this work, showing an excellent in-line agreement with the simulated results. This is a novel approach for improving the analog performance parameters of a nanowire MOSFET through doping optimization, which incorporates gate oxide stacking and germanium as a source material. In this work, the biosensing capability of the GSI-NWM has also been discussed and evaluated.

show abstract

Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Cited by 13 publications

References 22 publications

Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment

Photoemission study of praseodymia in its highest oxidation state: The necessity of in situ plasma treatment

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

Contact Info

Product

Resources

About