GaxSe10-x based solar cells: Some alternatives for the improvement in their performance parameters

Hoff, Anderson; Cruz-Cruz, Isidro; Siqueira, Mariana C.; Machado, K.D.; Hümmelgen, Ivo A.

doi:10.1016/j.solmat.2019.01.002

Cited by 8 publications

(1 citation statement)

References 36 publications

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“…Thin-film solar cells (TFSCs) based on crystalline silicon (c-Si), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS) semiconducting absorbers have widely been utilized for the applications in photovoltaic (PV) energy systems. − The commercial aspects of fascinating thin-film PV devices have been increased owing to their sufficient energy conversion, less expense, and low carbon emission. Besides, prominent photoconversion efficiencies of different heterojunction PV devices introducing the Cu 2 ZnSnS 4 (CZTS) semiconducting absorber have been realized. , Nevertheless, there are some drawbacks with the above-mentioned solar cells, such as their high weight, inflexibility, expensiveness of silicon wafer and equipment used, use of toxic elements, use of rare-earth materials, and manufacturing processes. − To overcome these challenges, several research groups have reported numerous designs for the PV devices with new absorbers. − But none of them are successful in replacing the conventional TFSCs with the new solar cell due to insignificant device performances.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Ahmed

2023

Energy Fuels

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The tin sulfide (SnS) absorber is becoming more attractive for application in high-efficiency, low-cost, and stable thin-film photovoltaic (PV) technology. In this work, zinc phosphide (Zn3P2) as a hole transport layer (HTL) and titanium dioxide (TiO2) as an electron transport layer (ETL) are employed to enhance the outputs of the SnS-based thin-film PV cell for the first time. The PV outputs of the proposed novel heterojunction structure defined as Ni/Zn3P2/SnS/TiO2/ITO/Al are assessed by using a 1D solar cell capacitance simulator. This study also reports on comparative PV outputs between the thin-film SnS-based solar cell with various HTLs and ETLs. It is observed that the proposed nontoxic Zn3P2 as the HTL and TiO2 as the ETL create proper band configurations with the SnS absorber layer. The carrier recombination loss can be significantly minimized at both rear and front interfaces in the proposed new heterojunction Zn3P2/SnS/TiO2/ITO solar device, thus considerably improving the PV output parameters. Several physical parameters, including thickness, carrier concentration, defect density, working temperature, work function, back surface recombination velocity, and device resistances, have been varied to evaluate the outputs of the suggested SnS PV cell. A power conversion efficiency of 30.45% is determined at the optimum thicknesses of 0.1 μm for the Zn3P2 HTL, 1.0 μm for the SnS absorber, and 0.05 μm for the TiO2 ETL. Therefore, these findings imply that the nontoxic Zn3P2 as the HTL and TiO2 as the ETL can be exploited to improve the efficiency of the heterojunction SnS solar cell structure.

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Section: Introductionmentioning

confidence: 99%

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Ahmed

2023

Energy Fuels

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Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer

Siddeka,

Khan,

Ali

et al. 2024

Physica Status Solidi (a)

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Herein, a new heterojunction photovoltaic (PV) device is designed by incorporating molybdenum trioxide (MoO3) as a hole transport layer (HTL), tin sulfide (SnS) as an absorber, and tungsten disulfide (WS2) as an electron transport layer (ETL). The PV outputs of the proposed thin‐film solar cell (TFSC) of Ni/MoO3/SnS/WS2/FTO/Al are investigated using the widely used solar cell simulator (SCAPS‐1D). It is found that the SnS TFSC with suitable band alignments at both the SnS/WS2 and MoO3/SnS interfaces gives better photoconversion efficiency than the conventional one. To optimize the material properties, the performance parameters, including open‐circuit voltage (Voc), short‐circuit current density (Jsc), fill factor (FF), and efficiency, have been calculated by varying the influences of the material's thickness, doping concentration, bulk and interface defect densities, operational temperature, and work function of back‐contact. At optimized thicknesses of 0.1 μm for MoO3 HTL and 1.0 μm for SnS absorber, the efficiency is estimated to be 30.42% with Voc of 1.02 V, Jsc of 34.38 mA cm−2, and FF of 87.04% for the suggested TFSC. These outcomes imply that the nontoxic MoO3 and WS2 materials can be applied as HTL and ETL into the inexpensive, highly efficient, and environmentally friendly SnS‐based PV cell.

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Performance analysis of SnS solar cell with a hole transport layer based on experimentally extracted device parameters

Hosen

Ahmed

2022

Journal of Alloys and Compounds

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GaxSe10-x based solar cells: Some alternatives for the improvement in their performance parameters

Cited by 8 publications

References 36 publications

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer

Performance analysis of SnS solar cell with a hole transport layer based on experimentally extracted device parameters

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GaxSe10-x based solar cells: Some alternatives for the improvement in their performance parameters

Cited by 8 publications

References 36 publications

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn3P2 Hole Transport Layer and a TiO2 Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn3P2 Hole Transport Layer and a TiO2 Electron Transport Layer

Performance Enhancement of SnS Solar Cell with Tungsten Disulfide Electron Transport Layer and Molybdenum Trioxide Hole Transport Layer

Performance analysis of SnS solar cell with a hole transport layer based on experimentally extracted device parameters

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Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn₃P₂ Hole Transport Layer and a TiO₂ Electron Transport Layer