2022
DOI: 10.1016/j.jallcom.2022.164823
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Performance analysis of SnS solar cell with a hole transport layer based on experimentally extracted device parameters

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Cited by 46 publications
(22 citation statements)
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“…Beyond the wavelength of 860 nm, the EQE spectrum is zero due to the fact that the photons with energies below the absorber band gap are not absorbed because of their low energy, thus passing through the cell instead of absorption. [ 35 ] Figure 12b also shows the integrated current density (∫ J sc ) derived from the EQE spectra. ∫ J sc of 28.57 mA cm −2 is calculated for the proposed perovskite FASnI 3 device, which is very close to the cell current obtained from the J – V measurement shown in Figure 12a.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Beyond the wavelength of 860 nm, the EQE spectrum is zero due to the fact that the photons with energies below the absorber band gap are not absorbed because of their low energy, thus passing through the cell instead of absorption. [ 35 ] Figure 12b also shows the integrated current density (∫ J sc ) derived from the EQE spectra. ∫ J sc of 28.57 mA cm −2 is calculated for the proposed perovskite FASnI 3 device, which is very close to the cell current obtained from the J – V measurement shown in Figure 12a.…”
Section: Resultsmentioning
confidence: 99%
“…The suggested heterojunction ITO/PEDOT:PSS/FASnI 3 /Nb 2 O 5 /Ag architecture will be investigated to optimize the device parameters. Initially, the physical parameters given in Table 1 in this simulation are extracted from the experimental works and calculated using the appropriate equations [ 35 ] to ensure the validity of these simulation results. The interface defect parameters are also presented in Table 2 .…”
Section: Methodsmentioning
confidence: 99%
“…The observed trends were comparable to other literature. 56 3.4 Device optimization 3.4.1 Optimization of absorber layer thickness. As the performance of the ITO/TiO 2 /CsPbI 3 /CBTS/Ni structure was influenced by the absorber thickness, we increased the absorber thickness from 400 nm to 2400 nm to optimize the device performance.…”
Section: Effect Of Absorber Defect Density With Absorber Thicknessmentioning
confidence: 99%
“…This can be attributed to a decrease in the barrier height for the majority charge carriers at the backcontact interface with increasing metal work function, thereby improving the performance of the device. [52,61,62] These results suggest that a back-contact metal work function above 5.4 eV would be optimal for better performance for the proposed PSCs.…”
Section: Effect Of Back Metal Work Function On Cell Performancementioning
confidence: 97%