Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

Toumi, Samir; Hamida, Abdelhak Ferhat; Boussouar, L.; Sellai, A.; Ouennoughi, Z.; Ryssel, H.

doi:10.1016/j.mee.2008.10.015

Cited by 50 publications

(38 citation statements)

References 61 publications

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“…It was also observed earlier for alpha-particle irradiated devices [31]. These deviations are due to the presence of inhomogeneities at the interface (such as surface defects and inhomogeneity in doping concentration) [20,[33][34][35][36][37][45][46][47]. There was little noticeable change in the ideality factors and SBH at temperature 120 K and above, for before and after irradiation.…”

Section: I-v Characteristicssupporting

confidence: 59%

“…The temperature dependent behaviour of n and SBH predicted an inhomogeneous barrier height and deviation from thermionic emission and diffusion theory as shown in Fig. 4 [20,34,37,47]. Barrier height can be determined in another way by re-writing Eq.…”

Section: The Richardson Plotmentioning

confidence: 99%

“…The experimental values of A* before and after irradiation were estimated from the intercept of the plot to be 4. [34,36,37,49,50], which indicate that the active area was smaller than the device area [47], and the effect of barrier inhomogeneity [8]. The mean barrier heights for both were deduced from the slope of the insert plot in Fig.…”

Section: The Richardson Plotmentioning

confidence: 99%

“…5 to be 1.41 and 1.30 eV. It has been reported earlier by many researchers that the deviation of the Richardson constants from theoretical value may be as a result of the effect of the barrier inhomogeneity at the MS interface and some other factors such as crystal defects and potential fluctuation [8,31,34,47]. Since the deviation cannot be explained by the thermionic emission diffusion model, the Gaussian distribution model of barrier height has been used.…”

Section: The Richardson Plotmentioning

confidence: 99%

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The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1 × 10 15 cm -3 has been investigated over the temperature range 40-300 K. Currentvoltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6 × 10 14 electrons-cm -2 . For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120 -300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8 × 10 15 to 6.8 × 10 15 cm -3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 Acm −2 K −2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.

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Section: I-v Characteristicssupporting

confidence: 59%

Section: The Richardson Plotmentioning

confidence: 99%

Section: The Richardson Plotmentioning

confidence: 99%

Section: The Richardson Plotmentioning

confidence: 99%

See 2 more Smart Citations

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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show abstract

“…This increase in barrier height with increasing temperature is the same behavior at the forward bias, where the thermionic model is used. The authors attributed this temperature dependence to the barrier height inhomogeneities prevailing at the metal-semiconductor interface [19], [32]- [34]. The Schottky barrier height on SiC is, in general, determined by both the metal work function and the interface states [35].…”

Section: Resultsmentioning

confidence: 99%

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

Latreche¹

2014

International Journal of Physical Research

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The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 10 16 cm -3 ), while, at low doping concentration (about 10 15 cm -3 ) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.

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Device Processing of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

Cited by 50 publications

References 61 publications

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

Device Processing of Silicon Carbide

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