Reverse bias-dependence of schottky barrier height on silicon carbide: influence of the temperature and donor concentration

Abstract

The work deals with the dependences of the Schottky barrier height (SBH) on the reverse bias voltage, temperature and on donor concentration of metal/4H-SiC Schottky diodes. Using the tunneling modeling we have shown that the Schottky barrier height on silicon carbide strongly depends on the reverse bias voltage, temperature and doping concentration. At room temperature, the Schottky barrier height increases with increasing the reverse bias voltage at high doping concentration (about 10 16 cm -3 ), while, at low doping concentration (about 10 15 cm -3 ) the Schottky barrier height decreases with increasing the reverse bias voltage. These behaviors are independent of the Schottky barrier lowering effect. That means other effects occur at the barrier and depend on the reverse applied bias. The barrier height increases with increasing temperature and doping concentration under reverse bias conditions. The barrier heights extracted from the Padovani-Stratton formulas are close to the barrier heights extracted from the Tsu-Esaki formula in particular for the thermionic-field emission.

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

“…3, it can be seen that the effective barrier height increases exponentially with temperature. We note that for SiC SBDs the Schottky barrier height strongly depends on the reverse bias voltage, temperature, and doping concentration [39]. These dependences are due to the combination of the effects of the interfacial layer and interface states located at the interface between metal and semiconductor contact [39].…”

“…We note that for SiC SBDs the Schottky barrier height strongly depends on the reverse bias voltage, temperature, and doping concentration [39]. These dependences are due to the combination of the effects of the interfacial layer and interface states located at the interface between metal and semiconductor contact [39]. Figure 4 shows the calculated and experimental reverse current densities according to tunneling and thermionic models for β-Ga 2 O 3 SBD at various temperatures.…”

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

“…For three these diodes, the barrier height decreases with decreasing the temperature. We noted that for SiC SBDs the Schottky barrier height strongly depends on the reverse bias voltage, temperature and doping concentration [10]. These dependences are caused by combination of the effects of the interfacial layer and interface states located at the contact interface between metal and semiconductor [10].…”

“…Both models were used separately to analyze the experimental reverse leakage current of SiC and other wide-gap SBDs. Combined and not combined with barrier lowering model, some authors [6][7][8][9][10][11] described the reverse leakage current using the general model [12] of the tunneling current. At the same time, the others [13][14][15][16][17][18] used the thermionic field emission (TFE) developed by Padovani-Stratton [19] also with and without the effect of the image force barrier lowering.…”

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes

“…The Schottky barrier height depends on the doping concentration and the applied reverse bias, i.e. the Schottky barrier height decreases with increasing reversed bias in the case of low doping concentration but increases in the case of high doping concentration 46 . With larger Ti fluence, more Ti diffuses into BFO during the PLD process and the as-prepared BFO thin film possesses a higher doping concentration.…”