Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Abstract

A new analysis method of reverse leakage current for β-Ga 2 O 3 Schottky barrier diodes is performed by using two models: bias dependence and no bias dependence of barrier height. The method incorporates both the current induced by the tunneling of carriers through the Schottky barrier and the current induced by the thermionic emission of carriers across the metal-semiconductor interface. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components that were separated from the total current. Below the reverse transition voltage, the thermionic emission current dominates, and above it, the tunneling current dominates, while near the reverse transition voltage, neither tunneling nor thermionic emission accurately describes the conduction process because the both currents have the same order of magnitude; therefore, the both mechanisms must be combined together. The experimental reverse transition voltage (bias-dependent model) increases for low and high temperatures and decreases at intermediate temperatures for β-Ga 2 O 3 Schottky barrier diodes. The bias dependence of the barrier height model shows that the barrier height is strongly dependent (increases) on the reverse bias, in particular at low temperatures and low reverse bias. This model can explain the discrepancy between the experimental characteristics and those calculated by no bias dependence of barrier height model.

Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes

“…As we showed in our previous works [18,19], the barrier height depends strongly on reverse bias voltage, especially for low reverse bias at low temperatures. In order to obtain the best results, we will omit to use the data that exhibit the reverse bias dependence of barrier height.…”

Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport

“…This is illustrated in Fig. 3 compared to the thermionic emission current [56]. In consequence, the densities of DD and NEGF with Büttiker probes at a higher voltages agree better and so do the recombination rate contributions in Fig.…”

Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

“…(14) and (15)) for β-Ga 2 O 3 SBD. (a) V T Exp obtained using the no bias dependence of the barrier height model [39], (b) V T Exp obtained using the bias dependence of the barrier height model [40]. steps outlined in our previous work [26], the following function relationships can be obtained for β-Ga 2 O 3 SBD: Using this model, we can predict the reverse transition voltage between the thermionic emission and tunneling mechanisms for any temperature range and reverse bias range; therefore, we can know which conduction mechanism is appropriate for analysis of the experimental data for β-Ga 2 O 3 SBDs.…”

“…3 and 4, our proposed analytical model indicated by the dotted lines is in good agreement with the simulated data. Moreover, in order to validate our proposed model, we tested it on experimental data previously published in the literature [40]. As shown in Fig.…”