Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Wang, Ronghua; Saunier, P.; Xing, Xiu; Lian, Chuanxin; Gao, Xiang; Guo, Shiping; Snider, Gregory L.; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/led.2010.2072771

Cited by 142 publications

(72 citation statements)

References 11 publications

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“…The carrier-concentrationdependent velocity has been measured in [8], where the peak velocity is found at n s ∼ 3 × 10 12 /cm 2 , which is consistent with our model. Experimental g m values as high as 0.8-0.9 S/mm have been reported recently [11]. The phonon model thus predicts that, as R s in GaN HEMTs is lowered, g m will become more "peaky."…”

Section: Model and Resultsmentioning

confidence: 88%

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Tian

Wang

Xing

et al. 2012

IEEE Electron Device Lett.

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114

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Section: Model and Resultsmentioning

confidence: 88%

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Tian

Wang

Xing

et al. 2012

IEEE Electron Device Lett.

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114

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“…The drain current of sample A shows a less steep slope than sample B, probably caused by additional interface traps due to the GaN cap and the gate dielectric. 22 Another effect of the additional dielectric and the higher gate-to-channel distance is a reduction of the leakage current in offstate at À1 V from 3 9 10 À3 mA/mm for sample B to 1 9 10 À4 mA/mm for sample A. As a result, the drain current I on /I off ratio is increased by one order of magnitude to 10 7 for sample A.…”

Section: Resultsmentioning

confidence: 99%

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

Reuters

Wille

Ketteniss

et al. 2013

Journal of Elec Materi

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Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode) transistors. Quaternary AlInGaN layers as barriers in GaN-based high-electron-mobility transistors (HEMTs) offer the possibility to perform polarization engineering, which allows control of the threshold voltage over a wide range from negative to positive values by changing the composition and strain state of the barrier. Tensile-strained AlInGaN layers with high Al contents generate high two-dimensional electron gas (2DEG) densities, due to the large spontaneous polarization and the contributing piezoelectric polarization. To lower the 2DEG density for e-mode HEMT operation, the polarization difference between the barrier and the GaN buffer has to be reduced. Here, two different concepts are discussed. The first is to generate compressive strain with layers having high In contents in order to induce a positive piezoelectric polarization compensating the large negative spontaneous polarization. Another novel approach is a lattice-matched Ga-rich AlInGaN/GaN heterostructure with low spontaneous polarization and improved crystal quality as strain-related effects are eliminated. Both concepts for e-mode HEMTs are presented and compared in terms of electrical performance and structural properties.

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“…Regarding thin AlN barriers, 1 nm thin AlN barriers have already been used in the fastest enhancement-mode (E-Mode) HEMTs. Experimentally, high on/off current ratios of ~10 7 and a very low leakage current I g ~ 10 -7 A/mm in E-Mode GaN HEMT with 1 nm AlN gate barriers have been demonstrated [16]. Also using 1 nm AlN barrier, the equivalent oxide thickness (EOT) is EOT = t PE × (ε SiO2 /ε AlN ) = (1 nm) × (3.9/9) = 0.43 nm, which allows for excellent electrostatic control and scaling.…”

Section: Introductionmentioning

confidence: 95%

On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

Jana

Snider

Jena

2013

Phys. Status Solidi C

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A novel method for the reduction of subthreshold slope below the room‐temperature Boltzmann limit of 60 mV/dec for a field‐effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This internal voltage gain mechanism provides an opportunity for steep subthreshold slope switching below 60 mV/decade of the transistor current. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Cited by 142 publications

References 11 publications

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

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