Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Abstract

The performance of InGaP-based pHEMT's as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMT's with gate lengths ranging from 1.0-0.2 m has been evaluated. Extrinsic transconductances from 341 mS/mm for 1.0 m gate lengths to 456 mS/mm for 0.5 m gate lengths were obtained. High-speed device operation has been verified, with of 93 GHz and max of 130 GHz for 0.2 m gate lengths. The dependence of dc and small-signal device parameters on gate length has been examined, and scaling effects in InGaP-based pHEMT's are examined and compared to those for AlGaAs/InGaAs/GaAs pHEMT's. High-field transport in InGaP/InGaAs heterostructures is found to be similar to that of AlGaAs/InGaAs heterostructures. The lower of InGaP relative to AlGaAs is shown to be responsible for the early onset of short-channel effects in InGaP-based devices.Index Terms-GaInP, InGaP, modulation-doped field-effect transistor (MODFET), pseudomorphic high electron mobility transistor (PHEMT).

Nonequilibrium transport in scaled high electron mobility transistors

“…To achieve this goal device scaling to sub-100 nm gate lengths has to be done proportionally in both lateral and vertical directions in order to retain gate control over the carriers in the channel [1,2]. When HEMTs optimized for the 100 nm gate length are scaled only in the lateral direction device performance deteriorates [3][4][5][6]. Because in a constant voltage scaling the reduction in device dimensions results in an increase of the electric field, the carrier transport in the channel beneath the gate is highly nonequilibrium and to a great extent ballistic [7,8].…”

A 30–65 GHz wideband double‐balanced gilbert‐cell mixer using GaAs pHEMT technology

“…Table 1 summarizes the measured performance of the Gilbert‐cell mixer and includes other reported performance figures, for comparison. The double‐balanced Gilbert‐cell mixer achieved a wide band, high conversion gain and good linearity and isolation, compared to the figures published for other studies [1–4].…”

“…A monolithic microwave integrated circuit (MMIC), which operates at millimeter‐wave (MMW) frequency, demands a wide bandwidth, for use in broadband wireless communication systems. GaAs pHEMT technology is the most suitable for MMW frequencies, for system‐on‐chip (SOC), due to its low noise, high cutoff frequencies and the good linearity of GaAs PHEMT devices [1–3]. At the front end of the MMW transceiver, the mixer plays an important role in the translation of the RF signals to the IF band.…”

Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application

“…Heterostructure field effect transistors (HFETs), such as electron mobility transistors (HEMTs), doped-channel field effect transistors (DCFETs) and heterostructure metalsemiconductor field effect transistors (MESFETs), etc, have attracted considerable attention for signal amplifier and digitalintegrated circuit applications [1][2][3][4][5][6][7]. Transistor performances with high output current and linearity are especially essential for large signal and linear amplification in circuit applications.…”