Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application

Abstract

InGaP/InGaAs-integrated enhancement/depletion-mode doped-channel pseudomorphic HFETs, fabricated on the same chip by a selective etching process, are demonstrated for the first time. For the depletion-mode device, the drain-to-source saturation voltage is only 0.3 V as V GS is fixed at 0 V. An extrinsic transconductance of 411 (278) mS mm −1 and a saturation current density of 221 (482) mA mm −1 are obtained for the enhancement (depletion) device. Furthermore, the noise margins NM H and NM L values are up to 0.731 V (0.72 V) and 0.28 V (0.755 V) at a supply voltage of 1.5 V (2.0 V) in the direct-coupled FET logic application.

Temperature-Dependent Characteristics of a Pseudomorphic High Electron Mobility Transistor with Graded Triple Delta-Doped Sheets

“…[1][2][3][4][5] Also, doped-channel fieldeffect transistors ͑DCFETs͒, due to the specific doped-channel structures, have demonstrated excellent linearity characteristics. 6 However, the intrinsic ionized impurity scattering in DCFETs seriously degrades carrier transport properties. 7 Experimentally, for the materials used in Schottky and buffer layers, the InGaP layer is a good candidate.…”

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

“…Nevertheless, attributed from the M-S gate contact, the gate potential barrier height was low even though a conduction-band discontinuity (DEc) at heterojunction is presented, and then the forward gate turn-on voltage and drain current were seriously limited. Furthermore, these devices showed voltage-dependent transconductance and were not proper for use as linear signal amplifier [4,5].…”