In this paper, the interesting hydrogen sensing properties of a Pd-gate AlGaN/GaN Schottky diode are investigated. A significantly low detection limit of 850 ppb H2/air gas can be observed with increasing the temperature to 423 K. The experimental results indicate that hydrogen molecules cause great influences on the diode breakdown voltage. Also, the diode exhibits an ultrahigh sensing response of 2.04×105 at 423 K when exposure to a 9660 ppm H2/air gas. The transient response time and reversibility of the studied device can be improved by increasing the operating temperature.
Temperature-dependent characteristics of an interesting pseudomorphic high electron mobility transistor with an electroless plated (EP) gate metal are studied and demonstrated. Under the low-temperature and low-energy electrochemical deposition conditions, the EP deposition technique provides an oxide-free metal-semiconductor interface with the reduction in surface damages. Experimentally, for a 1×100 μm2 gate-dimension EP-device, significant improvements of forward voltage, gate leakage current, Schottky barrier height, ideality factor, transconductance, drain saturation current, and IDS operating regime are found. In addition, good thermal stability of device properties are found as the temperature is increased from 300 to 500 K. Under an accelerated stress test, the studied EP-device also shows better performance over a wide temperature range. Therefore, the studied EP-gate device has a promise for high-performance electronic applications.
Electron capture in proton-lithium collisions at centre of mass energies below 10 keV is examined in the PSS approximation using a model potential for the e+Li' interaction. It is assumed that the level H(n = 2) is preferentially excited.Eigenvalues of the molecular Hamiltonian are found variationally, and radial and rotational coupling elements are calculated directly from these in prolate spheroidal coordinates. The coupling elements show strong dependence on the choice of coordinate system and have non-zero asymptotic limits. We use an adiabatic switching factor in the asymptotic region to ensure convergence of the cross sections. These are evaluated in the impact parameter approximation. Calculations involving both six and seven molecular states are performed. Radial coupling dominates the process at higher energies while rotational coupling is more important below 500 eV.Reasonable overall agreement with experiment is obtained in the energy range 500 eV to 8 keV, although our results still show considerable sensitivity to the choice of origin of the electron coordinates.
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